In:
Applied Physics Letters, AIP Publishing, Vol. 44, No. 6 ( 1984-03-15), p. 592-594
Abstract:
Plasma-assisted epitaxy (PAE) has been applied to grow GaSb films at substrate temperatures as low as 340 °C. A hydrogen plasma can reduce the density of residual impurities and/or defects. The hole concentration and Hall mobility of an undoped GaSb layer deposited in a hydrogen plasma at a substrate temperature of 410 °C on a GaAs (100) substrate are about 6×1016 cm−3 and 750 cm2/Vs, respectively, which are comparable to those obtained by other methods like molecular beam epitaxy, metalorganic chemical vapor deposition etc., in spite of a lower substrate temperature in PAE.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1984
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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