In:
Applied Physics Letters, AIP Publishing, Vol. 39, No. 6 ( 1981-09-15), p. 512-514
Abstract:
A new model of an electron free path in multiple layers is proposed for Monte Carlo simulation of electron trajectories. In this model, the free path is calculated taking into account not only the scattering probability in the layer involving the initial scattering point but also that in the layers along the scattering direction. The result, simulated with the new model, agrees with the experimental result much better than results obtained with conventional models for backscattered electron intensity. It is also suggested that the simulation accuracy for the electron beam lithography is improved using the new model.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1981
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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