In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 22, No. S2 ( 1983-01-01), p. 14-
Abstract:
A PbTiO 3 thin film has been grown on Pt or Pt-coated Si wafer by chemical vapor deposition instead of rf sputtering which makes a surface of substrate damaged. As the source material of the deposition, two kinds of combinations of (PbCl 2 and TiCl 4 ) and (PbO and Ti(C 4 H 9 O) 4 ) have been tried to know the effect of chlorine inclusion in the PbTiO 3 network. The surface of the film is much smoother than that of the film prepared by the rf sputtering, and deposition rate is several µm/hr. The deposited film structure is mostly oriented to 〈 100 〉 or 〈 110 〉 direction which depends on the source material and the deposition condition. The maximum dielectric constant of the film is 130, and D-E hysteresis characteristic has been also obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.22S2.14
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1983
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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