In:
Journal of Applied Physics, AIP Publishing, Vol. 54, No. 9 ( 1983-09-01), p. 5358-5362
Abstract:
Optical absorption and photoluminescence have been used to determine the nitrogen concentration in liquid phase epitaxy GaP and GaxIn1−xP layers. Both methods give the same variation of nitrogen concentration. The same nitrogen maximum concentration of [N]=8×1017 cm−3 has been found in GaP and in Ga0.998In0.002 grown at 900 °C and PNH3 & gt;10−3 atm. In InGaxIn1−xP, it has been shown that the nitrogen concentration incorporated in the layer decreases as the indium amount increases for indium concentrations less than 5%, in samples prepared with identical growth conditions.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1983
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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