In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 22, No. S1 ( 1983-01-01), p. 397-
Abstract:
0.1 µm Mo layers are deposited on III-V compounds by electron-beam evaporation. The electrical properties and interface of Schottky barriers are assessed by I-V, C-V, DLTS and Rutherford Backscattering (2 MeV He + , θ=160°). The near-ideal Schottky diodes ( n 〈 1.05) are formed and thermionic emission mechanism is applicable in these Mo/III-V systems. In the defect-free Mo/GaAs (epitaxy) system, the reverse current behavior can be expressed by the Andrews and Lepselter model. The deep hole trap with energy of E v +(0.93±0.04) eV is observed in the Mo/GaAs (undoped) system and attributed to the native defects of bulk GaAs. The thermal stability of Mo/GaAs Schottky barrier is greater than that of Mo/GaAs 0.6 P 0.4 , and the Mo/GaAs Schottky barrier can be used in high power IMPATT and MESFET devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.22S1.397
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1983
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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