In:
Journal of Applied Physics, AIP Publishing, Vol. 54, No. 12 ( 1983-12-01), p. 7041-7046
Abstract:
Reproducible low-resistance contacts to p-type CdTe single crystals have been made by diffusion of Li into the CdTe surface before evaporation of Au as the contact metal. Diffusion produces a surface hole density of about 1019 cm−3 at room temperature; this results in a contact resistivity of the order of 0.01 Ω cm2, the lowest value reported to date for p-type CdTe. The high diffusivity of Li results in a degradation of the contacts even at room temperature, with the degradation rate critically dependent on the temperature used for Li diffusion. The optimum temperature appears to be about 280 °C; contacts formed on surfaces diffused with Li at this temperature show a contact resistivity of 0.025 Ω cm2 after 5 months.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1983
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink