In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 19, No. S2 ( 1980-01-01), p. 55-
Abstract:
Silicon solar cells are fabricated using ion implantation and laser annealing. An AM1 conversion efficiency of 10.5% is obtained without an antireflection coating in a cell ion-implanted with 4×10 15 P + ions/cm 2 at 25 keV and laser annealed using a Q-switched ruby laser. This efficiency increases after low temperature furnace annealing as a result of improvement in open circuit voltage ( V oc ) and fill factor ( FF ).
The dependence of V oc on furnace annealing temperature is examined by diode characteristics measurements and deep-level transient spectroscopy. The fact that V oc increases and diode reverse current density decreases as the furnace annealing temperature increases is related to the decrease in the number of residual defects near the junction.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.19S2.55
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1980
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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