In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 23, No. 12R ( 1984-12-01), p. 1560-
Abstract:
Titanium was deposited on a single-silicon wafer and made to form TiS 2 by thermal annealing in vacuum. Samples were then oxidized at temperatures from 100 to 1000°C for 60 min in air. When the oxidized TiS 2 was studied by X-ray photoelectron spectroscopy (XPS) in conjunction with argon-ion sputtering, SiO 2 was found to be dominant in the oxide products at various oxidation temperatures. Full-width at half maximum (FWHM) and Si/Ti atomic ratio analyses led to the conclusion that various Ti oxides exist in oxidized TiSi 2 , but that the intermediate Ti-silicides (TiSi and Ti 5 Si 3 ) do not. The growth of a Ti-free layer of SiO 2 at 1000°C was also observed. SEM micrographs showed that no surface morphologies varied before or after oxidation in air at temperatures from 100 to 800°C. Above 1000°C, however, the TiSi 2 film was thermally grooved at its grain boundaries, and the grain sizes were increased. Analytic electron-microscope photographs showed that the crystalline grains consisted of TiSi 2 , but that the grain boundaries lay within the Ti-free zone.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.23.1560
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1984
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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