In:
Applied Physics Letters, AIP Publishing, Vol. 38, No. 7 ( 1981-04-01), p. 557-559
Abstract:
The masked thermal oxidation of GaAs was carried out successfully with stripe Cr-Au metal film as a mask. The oxidation rate of Ga1−xAlxAs was found to be much smaller than that of GaAs; this fact means that the thermal oxidation process is selective for the GaAs-Ga1−xAlxAs multilayer structure. By means of this masked and selective thermal oxidation (MSTO) technique, the stripe optical waveguides of GaAs and stripe GaAs-Ga1−xAlxAs double-heterostructure (DH) lasers were fabricated. A demonstration of the stripe guide and some performance of stripe DH lasers are presented.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1981
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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