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  • experimental  (2)
  • 1980-1984  (2)
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  • 1980-1984  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 341-351 
    ISSN: 1572-8986
    Keywords: r.f. plasma ; silicon deposition ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The efficiency of reduction of silicon tetrachloride and the rate of deposition of Si in a low-pressure r.f. plasma was investigated at two frequencies (0.4 and 27 MHz) as a function of position with regard to the rf coil, pressure, and time of deposition. At 27 MHz the decomposition efficiency of silicon tetrachloride and the deposition rate of Si are about three times higher than at 0.4 MHz.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 235-248 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; plasma polymerization ; silicon tetrachloride ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
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