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  • 1985-1989  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    Interface structure and lattice mismatch of epitaxial CoSi2 on Si(111) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1176-1178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the x-ray standing-wave technique and bulk x-ray diffraction to investigate the structural properties of thin CoSi2 layers grown epitaxially on Si(111). The perpendicular lattice mismatch with respect to the Si substrate was found to be −0.0152±0.0003 and −0.016±0.001 for 6-nm-thick and 16-nm-thick layers, respectively. The distance between Si(111) and the first Co layer was measured to be (0.288±0.005) nm and is thus stretched by (0.014±0.005) nm compared with a value determined by Si-like bulk bond length. The Co atoms are attached to the Si(111) dangling bonds in agreement with the model of fivefold coordinated metal atoms at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98724
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  • 2
    Electronic Resource
    Electronic Resource
    Computation of quantum mechanical transmission probability from plane interfaces using electronic band structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4903-4907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for computing the quantum mechanical transmission probability (QMTP) from plane interfaces is presented. The method uses the electronic band structure of the material and the independent-electron approximation, and consists of a proper reduction of the three-dimensional problem to a one-dimensional problem, using a generalized form of the WKB wave functions, and matching the wave functions at the interface to preserve the continuity of a generalized probability current and density. The method was used to compute the QMTP at the interface of a simple metal and the Si(100) and Si(111) surface for ballistic electrons traveling normal to the interface at the Schottky image barrier maximum. The result shows that the crystal orientation and the location of the band minimum affect the QMTP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343206
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3886-3894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si and Ge layers have been grown on CaF2/Si(111) by molecular-beam epitaxy. Both Ge and Si grow as islands, and both the island size and the spacing between nucleation sites are considerably larger for Ge (∼300 nm) than for Si (∼100 nm). In addition, Ge and Si layers are found to be a mixture of type-A (aligned with the underlying CaF2) and type-B (rotated 180° about the surface normal with respect to the underlying CaF2) regions. The crystalline quality and surface morphology of the Ge layers are much better than those of the Si layers. This is thought to be due to the larger island size of the Ge deposits and to a greater ease of movement of the boundaries between type-A and type-B regions in Ge. Hall measurements show electron mobilities of up to 664 cm2/V s in Si layers and hole mobilities of 234 cm2/V s for Ge layers. Finally, the use of a GexSi1−x-Si superlattice, when grown on a GexSi1−x buffer layer which is lattice matched to the CaF2 at the growth temperature, is shown to improve Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337561
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth and characterization of CaF2 on Si (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 302-308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaF2 films have been grown epitaxially on (100) and (111) Si substrates by molecular beam epitaxy. These films have been characterized by electron microscopy, reflection high-energy electron diffraction, Rutherford backscattering ion channeling, and back-reflection Laue x-ray diffraction. In addition, chemical etching has been used to reveal dislocations and to delineate cracks. Film cracking appears to be related to crystalline perfection through misfit dislocation mobility. It is possible to grow high quality, (xmin=3.0%) single-crystal films on (111) Si which are free of cracks and atomically flat. However, the high free energy of the (100) surface in an ionic fluorite crystal prevents the growth of comparable CaF2 films on the (100) Si surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335676
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  • 5
    Electronic Resource
    Electronic Resource
    Transverse acoustoelectric voltage measurements of GaAs grown directly on (100) Si substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4218-4222 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse acoustoelectric voltage (TAV) measurements have been analyzed as a function of incident photon energy, dc bias voltage, temperature, and surface acoustic wave (SAW) frequency of GaAs layer (∼1.4 μm thick) grown on a vicinal Si(100) substrate by molecular-beam epitaxy. The TAV technique is used to show that the band gap and impurity level transitions are of slightly lower energies, compared to the bulk GaAs. This might be due to the residual strain changes in the band structure of GaAs grown on Si. It is also noticed that the presence of an interface considerably changes the shape of the experimental TAV versus bias voltage at low temperatures. Drastic variations of TAV as a function of SAW frequency and temperature are also observed. The cause of variations is not yet clear, but possible explanations are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343961
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  • 6
    Electronic Resource
    Electronic Resource
    Optical properties of epitaxial CoSi2 and NiSi2 films on silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2738-2741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical constants of epitaxial films of CoSi2 and NiSi2, grown by molecular beam epitaxy on Si(111), in the energy range of 0.9–4.0 eV. The behavior of the optical constants is characteristic of metals: Drudelike in the low energy region and deviating from Drude behavior as interband transitions set in. Interband transitions are found to have already set in at 1 eV. The absorption varies significantly with energy, which has implications for photoresponse studies of internal photoemission in these material systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344217
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  • 7
    Electronic Resource
    Electronic Resource
    Determination of lattice mismatch in NiSi2 overlayers on Si(111) (1987)
    Springer
    Applied physics 44 (1987), S. 365-369 
    Details
    ISSN: 1432-0630
    Keywords: 68.60.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We determined the perpendicular overlayer mismatch for type A and type B NiSi2 samples of thicknesses ranging from about 200 to 1000 Å via bulk x-ray diffraction. An increase in the density of dislocations which are formed to release the strain at the growth temperature leads to an increase in the magnitude of mismatch and strain at room temperature. The results on the thinner type A samples show that the perpendicular overlayer mismatch is found to depend on the overlayer thickness even when no dislocations are present at the interface. This may be due to point defects in the epitaxial NiSi2 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624605
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