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  • 1985-1989  (11)
  • 1
    Electronic Resource
    Electronic Resource
    Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1769-1771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth dependence of silicon donor passivation and reaction in hydrogenated GaAs is directly determined for the first time by using 1000 A(ring) layers of 1017 cm−3 Si-doped GaAs, buried at various depths in undoped GaAs. Low-frequency hydrogen plasma exposure for 30 min at 250 °C reduces the carrier density by only a factor of 3 in layers buried 3 μm deep, but by three orders of magnitude in layers buried 0.3 μm deep. Annealing at 400 °C for 5 min restores 100% of the original carrier density in the 3-μm-deep layer but only 73% in the 0.3-μm-deep layer. Plasma exposure and 400 °C annealing together do not improve the mobility in the molecular beam epitaxial samples at any depth. Hydrogen-related acceptors seen by photoluminescence account for these effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101286
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  • 2
    Electronic Resource
    Electronic Resource
    Highly stable W/p-In0.53Ga0.47As ohmic contacts formed by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten contacts to Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. Contacts to layers with a Zn doping concentration of 5×1018 cm−3 were rectifying as sputter deposited as well as after heat treatments at temperatures lower than 450 °C. Higher processing temperatures caused a linear decrease of the contact resistivity values from 0.6 as deposited to 0.15 Ω mm after heating at 550 °C. Rapid thermal processing at these higher temperatures stimulated the Schottky-to-ohmic contact conversion with a minimum contact resistance value of 8.5×10−5 Ω cm2 and a sheet resistance value of 150 Ω/(D'Alembertian) as a result of heating at 600 °C for 30 s. By increasing the p-InGaAs doping level to 1×1019 cm−3, the specific resistance of this contact was dropped to the minimum of 7.5×10−6 Ω cm2 as a result of heating at 600 °C for 30 s. The W/p-In0.53Ga0.47As contact showed excellent thermal stability over the temperature range of 300–750 °C, with an abrupt and almost unreacted metal-semiconductor interface. Heating at temperatures of 800 °C or higher caused degradation of the contact. This was reflected by a distinct increase in the heterostructure sheet resistance as a result of the intensive interfacial reaction which took place at the contact, accompanied by outdiffusion of both In and As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102066
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogenation of GaAs on Si: Effects on diode reverse leakage current (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 496-498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation for 3 h at 250 °C of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition, followed by a 5-min, 400 °C anneal to restore the passivated shallow donor electrical activity, increases the reverse breakdown voltage of Schottky diode structures from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si. A reduced Schottky barrier height is exhibited by hydrogenated samples, consistent with As depletion of the surface occurring during the long duration plasma processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98378
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  • 4
    Electronic Resource
    Electronic Resource
    Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 56-58 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching of InP with CH4/H2 mixtures leads to hydrogen passivation of near-surface Zn acceptors but not S donors. Secondary-ion mass spectrometry (SIMS) measurements of CH4/D2 etched samples show deuterium diffuses to a depth of 2000 A(ring) in p-InP (1.5×1018 cm−3) when etching at a rate of 520 A(ring)/min and a temperature of about 80 °C. Acceptor passivation occurs to the same depth. For n-InP, no donor passivation is observed, even though SIMS shows deuterium diffusion to a depth of 7000 A(ring). Annealing at 350 °C for 1 min restores carrier concentrations to near pre-etched levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101752
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  • 5
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2306-2308 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very low resistance nonalloyed ohmic contacts of Pt/Ti to 1.5×1019 cm−3 Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. These contacts were ohmic as deposited with a specific contact resistance value of 3.0×10−4 Ω cm2. Cross-sectional transmission electron microscopy showed a very limited interfacial reacted layer (20 nm thick) between the Ti and the InGaAs as a result of heating at 450 °C for 30 s. The interfacial layer contained mostly InAs and a small portion of other five binary phases. Heating at 500 °C or higher temperatures resulted in an extensive interaction and degradation of the contact. The contact formed at 450 °C, 30 s exhibited tensile stress of 5.6×109 dyne cm−2 at the Ti/Pt bilayer, but the metal adhesion remained strong. Rapid thermal processing at 450 °C for 30 s decreased the specific contact resistance to a minimum with an extremely low value of 3.4×10−8 Ω cm2 (0.08 Ω mm), which is very close to the theoretical prediction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101110
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342547
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  • 7
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-InGaAsP nonalloyed ohmic contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed ohmic contacts of Pt/Ti to 5×1018 cm−3 doped p-InGaAsP (λg =1.3 μm) have been fabricated by rapid thermal processing of sputtered and e-gun-deposited metallizations. While the former as-deposited had a rectifying characteristic, the latter showed ohmic behavior prior to any heat treatment, with a specific contact resistance of 4×10−3 Ω cm2. Rapid thermal processing at temperatures higher than 400 °C caused the formation of ohmic contacts for the sputtered metals also, but with the evaporated metals producing slightly lower contact resistance. The lowest specific contact resistance values of 3.6–5.5×10−4 Ω cm2 for evaporated and sputtered metallizations, respectively, were achieved in both cases as a result of heating at 450 °C for 30 s. These heating conditions produced only a limited reaction at the Ti/InGaAsP interface, which was sharper for the e-gun-deposited contact, but had a significant effect on the stresses in the Ti/Pt bilayer. In both the sputtered and electron gun evaporated samples, the stresses were inverted from tensile as-deposited to compressive with values of 2.4×109 and 1.0×109 dyn cm−2, respectively, as a result of the heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343291
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogenation of shallow-donor levels in GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2821-2827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow-donor levels due to Si, Ge, Sn, S, Se, and Te in GaAs are neutralized by association with atomic hydrogen; Si and Te donors in AlGaAs have also been shown to be neutralized. In contrast, the shallow acceptors Be, Mg, Zn, and Cd in GaAs are relatively unaffected by hydrogenation. The activation energy for recovery of the donor electrical activity is around 2.1 eV for each of the species, but varies as the strength of an isolated hydrogen-donor species bond. The neutralization depth of the donors is proportional to the inverse square root of donor concentration, and this depth is given as a function of plasma exposure temperature (100–350 °C) and bonding site density (8×1013–1.5×1018 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336964
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of acceptors in p-InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1993-1996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of hydrogenation of InP without surface degradation has been surmounted by exposure of the InP surface to a hydrogen plasma through a thin SiNx(H) cap layer. This layer is H permeable at the hydrogenation temperature of 250 °C, but P or PH3 impermeable thus minimizing PH3 loss and the attendant In droplet formation. In contrast to our results for this type of plasma exposure of GaAs, we find that shallow acceptors in InP are heavily passivated, whereas shallow donors are only very weakly affected. For example, p+-InP(Zn) of 3×1018 cm−3 has its residual hole concentration reduced to ≤3×1014 cm−3 over a depth of 1.3 μm by a 250 °C, 0.5 h deuteration. The presence of acceptors impedes H (or D) indiffusion, as indicated by D diffusion under the same conditions occurring to depths of 18 and 35 μm in p-InP (Zn, 2×1016 cm−3) and n-InP (S or Sn), respectively. Annealing for 1 min at 350 °C causes the acceptor passivation to be lost and the hole concentration to be returned to its prehydrogenation level, indicating that the passivation has similar thermal stability to that of acceptors in GaAs, but lower than that of donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344508
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  • 10
    Electronic Resource
    Electronic Resource
    AuBe/p-InGaAsP contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2056-2060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloyed ohmic contacts of AuBe (1% Be by weight) to 5×1018 cm−3 Zn-doped p-InGaAsP (λg=1.3 μm) were fabricated by rapid thermal processing and its performance was compared to those of the contacts formed by conventional furnace heating. The specific contact resistance decreased from a value of 4.9×10−4 Ω cm2 as-deposited to a value of 4.9×10−7 Ω cm2 as a result of rapid thermal processing at 420 °C for 30 s. This value was much lower than the value of 3.9×10−6 Ω cm2 obtained as a result of furnace heat treatment at 420 °C for 10 min. Rapid thermal processing at higher temperatures caused a sharp increase of the specific contact resistance. Auger depth profiling indicated that the degradation of the contact electrical performance at temperatures of 450 °C or higher were caused by intensive localized interactions between the AuBe and the InGaAsP and out-diffusion of all the quaternary elements toward the surface of the contact. The effective stress in the alloyed layer, normalized to the initial AuBe thickness of 80 nm, was tensile with a value of 7×109 dyn cm−2, and was less sensitive to the alloying parameters (time and temperature) than was the contact resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344295
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