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  • 1
    Online-Ressource
    Online-Ressource
    Berlin, Heidelberg :Springer Berlin / Heidelberg,
    Schlagwort(e): Probabilities. ; Electronic books.
    Materialart: Online-Ressource
    Seiten: 1 online resource (472 pages)
    Ausgabe: 1st ed.
    ISBN: 9783642832529
    Serie: Lecture Notes in Engineering Series ; v.32
    Sprache: Englisch
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 6388-6396 
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 159-170 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Electron transfer from an optically excited donor to randomly distributed acceptors followed by electron back transfer is treated theoretically for donors and acceptors in a rigid solution. The forward electron transfer process is described in terms of the excited state population probabilityPex(t) of the donor molecules, while the electron back transfer from the radical anion to the radical cation is characterized by Pct(t), the donor cation state population probability. Exact expressions for the ensemble averages 〈Pex(t)〉 and 〈Pct(t)〉 are derived. Numerical calulations are presented for the cation probabilities, the average cation–anion separation distance 〈R(t)〉, and the average cation existence time 〈τ(R)〉, using parameters which characterize the forward and back transfer distance dependent rates. Relationships among 〈Pex(t)〉, 〈Pct(t)〉 and the intermolecular interaction parameters provide detailed insights into the distance and time dependence of the flow of electron probability in an ensemble of donors and acceptors. The theoretical expressions can be used to calculate experimental observables. In particular, picosecond transient grating experiments are analyzed, and it is shown that by combining grating experiments (or other ground state recovery experiments) with fluorescence experiments it is possible to obtain the intermolecular interaction parameters for both forward and back transfer and a detailed description of the dynamics. The calculations presented here for rigid solutions are the precursor to the inclusion of diffusive motion of donors and acceptors to describe the dynamics of coupled electron transfer and back transfer in liquid solutions.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 33-38 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Some of the properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure (SL-QWH) injection lasers are described. The laser structures are grown by molecular beam epitaxy on n+ GaAs substrates. Following the growth of a 0.5-μm n+ GaAs buffer layer, a 2-μm Al0.45Ga0.55As n-type cladding layer is grown. Next an undoped active region is grown, consisting of ∼1600 A(ring) of GaAs with three ∼40-A(ring) In0.35Ga0.65As quantum wells separated by two ∼30-A(ring) GaAs barrier layers. Following the active region, a 2-μm Al0.45Ga0.65As p-type cladding layer and a 0.5-μm p+ GaAs cap layer are grown. Broad-area SL-QWH lasers operate under pulsed conditions at room temperature with threshold current densities as low as 465 A/cm2. The operating wavelength is near 1 μm. Lasers have operated for up to 1000 h with less than 25% increase in current density to maintain a constant output of 2 mW/facet. Data are also presented describing the temperature dependence of threshold current density. Values of T0 between 80 and 103 K are observed near room temperature, indicating that these SL-QWH lasers are somewhat more sensitive to temperature changes than conventional laser structures.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1931-1933 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that exchange interactions in the two-dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift. Theoretical estimates of such shifts are compared with experimental measurements of the infrared photoconductivity of multiple quantum well AlGaAs/GaAs structures with wells doped at about 1018 cm−3.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 206-206 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 107-109 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial growth of InP on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy is reported for the first time. Single-crystal InP epilayers with specular surfaces can be obtained. The ZnSe buffer layer, which is evaporated onto the Si substrate in another furnace, is effective in reducing the magnitude of strain in the InP layer. The best room-temperature electron mobility of the undoped InP epilayer can reach 3100 cm2 /(V s) with a carrier concentration of 1.5×1015 cm−3 . It was found that the InP electron mobility is critically dependent on the ZnSe buffer-layer thickness. The efficient photoluminescence compared with that of InP homoepitaxy indicates that the InP heteroepilayer is of high optical quality.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4241-4243 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: ZnSe epitaxial layers were successfully grown on (111) Si substrates by low-pressure metalorganic chemical vapor deposition. It is not necessary that the reactant inlet tubes project to near the substrates. From x-ray and scanning electron microscopy examinations, single-crystalline ZnSe epilayers with mirrorlike surfaces can be obtained. The carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The electron mobility of the epilayer at room temperature is 280 cm2 /V s. The efficient 77-K photoluminescence indicates that the ZnSe epilayers are of good quality.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1655-1656 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: By using an amorphous overlayer of arsenic, it is shown that a GaAs(100) wafer, with a layer of GaAs grown on it by molecular-beam epitaxy, can be satisfactorily transferred in the laboratory atmosphere from one ultrahigh vacuum chamber to another. The clean GaAs(100) surface is retrieved in the second chamber by low-temperature (350 °C) evaporation of the arsenic overlayer. An epitaxial layer of CaF2 was grown successfully on a smooth GaAs surface retrieved in this manner. This technique offers an opportunity to investigate GaAs/epifluoride/GaAs structures by transferring samples between the GaAs growth chamber and the fluoride growth chamber without subjecting them to a higher temperature (600 °C) cleaning process.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 875-878 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The epitaxial growth and characterization of the structural, morphological, interfacial, and electrical properties of lattice-matched Ca0.43Sr0.57F2 on GaAs(100) are reported here. The ∼200 nm films were grown at 500 °C on the GaAs(100) substrates that had been cleaned by annealing at 600 °C. Nomarski optical microscopy, transmission electron microscopy (TEM), scanning electron microscopy, and reflection high-energy electron diffraction results showed that the films were smooth and crackfree, with good crystalline quality. TEM showed evidence of two general types of extended defects in the film which occur at or near the film/substrate interface region. Film resistivity was found to be (3.6±0.75)×1013 Ω cm, and the breakdown field strength was (5.8±1.4)×105 V/cm. However, the breakdown in this case represented a nondestructive conduction process, as opposed to the catastrophic and irreversible change observed in previous studies. The dielectric constant of the films was measured to be 7.43±0.22. Capacitance-voltage measurements indicated that there could be a high density of surface states at the interface that pin the Fermi level within the gap region.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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