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  • 1985-1989  (2)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Contributions to mineralogy and petrology 95 (1987), S. 226-230 
    ISSN: 1432-0967
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract A suite of heat-treatment experiments have been performed to test the high-temperature stability of San Carlos olivine within the theoretical $${\text{p}}_{{\text{O}}_{\text{2}} } $$ stability field at one atmosphere total pressure. Exsolution or contamination products did not form on the surfaces of samples which were surrounded by olivine, magnesia, or alumina. In contrast, silica-rich phases developed on the surfaces of samples which were in line-of-sight contact with silica or platinum. These silica-rich phases result from interaction of the olivine with silica or platinum in the furnace environment via vapor phase transport or surface diffusion, rather than from diffusion of excess silica from the bulk to the surface as suggested by Jaoul et al. (1984, 1985). This conclusion is consistent with the reported slow rate of diffusion of silicon in olivine and with the lack of internal precipitation of silica-rich phases. Consequently, it is concluded that San Carlos olivine does not contain silica in excess of the solubility limit under conditions which are within the $${\text{p}}_{{\text{O}}_{\text{2}} } $$ -T stability field for this (Mg,Fe,Ni)-olivine.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Physics and chemistry of minerals 13 (1986), S. 351-356 
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract Creep experiments have been performed on samples from a single crystal of vanadium-doped forsterite under controlled $$p_{{\text{O}}_2 } $$ conditions to investigate the effects of the addition of substitutional defects in the tetrahedral lattice sites. The addition of vanadium causes marked changes in the flow behavior of the forsterite, with a net increase in the creep rate at high $$p_{{\text{O}}_2 } $$ and a new $$p_{{\text{O}}_2 } $$ -dependent flow regime at low $$p_{{\text{O}}_2 } $$ conditions. These observations can be interpreted as resulting from changes in the majority defect species that maintain the charge neutrality within the crystal. A climb-controlled dislocation creep model for the high-temperature deformation of vanadium-doped forsterite is proposed in which either (i) movement of uncharged jogs is rate-limited by the diffusion of silicon via a vacancy mechanism or (ii) movement of positively charged jogs is rate-limited by diffusion of oxygen via a vacancy mechanism.
    Type of Medium: Electronic Resource
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