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  • 1985-1989  (8)
Document type
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Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 624-628 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-energy levels in the GaAs-Ga1−xAlxAs superlattice with finite thicknesses of interfaces between the layers, instead of sharp discontinuities across the interfaces, have been investigated. This model is more realistic for superlattices. A linearly increased (decreased) potential across the interfaces was assumed and a dispersion relation was derived to the second order of the thickness of the interface. The miniband structure, the shifting of the ground-state energy of the electron, and the effective-energy gap as functions of this thickness are presented.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4187-4193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an investigation into the redistribution of dopants—As, B, and P—during the solid-phase reaction of Cr with Si substrates to form CrSi2 are presented. Cr layers, 47 nm thick, were evaporated onto B-doped Si substrates which had previously been implanted with one of the three dopants. Two implant doses were investigated for each dopant. Following heat treatment at 500 °C, doping profiles were determined by secondary-ion mass spectrometery (SIMS) and, for arsenic-doped samples, by Rutherford backscattering spectroscopy (RBS). Both SIMS and RBS were also used to measure the extent of silicide formation. The results demonstrate that B and P are transported from the Si substrate to the surface of the growing CrSi2 layer while As accumulates at the CrSi2/Si interface. The silicide formation reaction is shown to be inhibited by large As concentrations. No other dopant-concentration-related effects were observed. A model, based on dopant segregation driven by the relative free energies of CrSi2 and Cr-dopant compounds, is proposed to explain the results.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 567-574 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen behavior during the formation of CrSi2 and TiSi2 was studied using 16O(α,α)16O resonant scattering and mass dispersive recoil detection analysis. The Ti and Cr films were deposited by e-beam evaporation in a cryopumped system. The oxygen content in the films was varied by evaporating at different pressures. The silicide films were formed by solid-solid reaction of the metal layers with the silicon substrate, and the annealing conditions were such that both partly and fully reacted silicides were obtained. The extent of the silicide formation was monitored by backscattering spectrometry. In the case of CrSi2, oxygen was found to be uniformly distributed throughout the silicide layer after annealing. For the Ti/TiSi2 system, however, oxygen seems to have preferentially remained in the Ti layer during the silicide growth, and its final distribution was confined in a region in the silicide close to the surface. It was also observed in the latter case that silicon diffused to the surface at the initial stage of annealing. A model based on the Nernst–Einstein equation is proposed to provide a general explanation for the oxygen behavior in metal/silicon systems. In addition, it was shown that oxygen which was initially in the form of metal oxides and in solid solution had been transformed into SiO2 after the silicide formation. Oxygen loss is observed for all samples, and increases with the extent of annealing.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4769-4770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Differential scanning calorimetry measurements of mercuric iodide (HgI2 ) do not suggest the existence of the α'-HgI2 phase, as previously reported, when the necessary precautions are taken to avoid any chemical reaction with the sample holder. This conclusion is supported by variable temperature Raman spectroscopic measurements performed in the vicinity of the melting point, where the α' was supposed to exist.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1984-1989 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For a real superlattice, fluctuations are always presented in the period lengths. The band structure of semiconductor superlattices under the effect of this periodic disorder has been investigated in this paper. The zone center and zone edge of the first subband of electrons and holes and the effective energy gap as functions of this fluctuation have been calculated. We discuss the dependence of the band offset on this fluctuation. Our calculated results can be used to explain some of the experimental observations.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Catalysis letters 1 (1988), S. 99-107 
    ISSN: 1572-879X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Mono- and multimetallic Ni/NaY samples have been studied by static and dynamic techniques. The reducibility of Ni is dramatically enhanced by Pt clusters in supercages and by Mn ions blocking small zeolite cages. No H2 is trapped by NaY, but for Ni/NaY, NiPt/NaY, or NiPtMn/NaY more H2 is released in temperature programmed “desorption” (TPD) than can be adsorbed at 25 °C. Two phenomena are responsible for the apparent discrepancy between ad- and desorption: (1) Ni inside small cages can ad- and desorb hydrogen only when cage windows are widened by thermal vibration to permit passage of H2. (2) Above 500 °C the original reduction process Ni2+ + H2 = Ni0 + 2H+ is reversed, i.e. Ni atoms are oxidized by hydroxyl groups. This is confirmed by the H2 consumption in subsequent reduction. The high-temperature TPD feature can be used to estimate the amount of reduced Ni that is located in small cages.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Reaction kinetics and catalysis letters 35 (1987), S. 207-217 
    ISSN: 1588-2837
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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