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  • 1985-1989  (10)
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  • 1
    Electronic Resource
    Electronic Resource
    An ellipsometry study of a hydrogenated amorphous silicon based n-i structure (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4566-4571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry measurements have been used as a probe to provide information on the structure of a hydrogenated amorphous silicon based n-i two-layer system. The n-i structure is prepared under the same conditions as an a-Si:H p-i-n cell with a thin (∼150 A(ring)) n layer deposited in a glow discharge from a mixture of SiF4, SiH4, H2, and PH3 on top of intrinsic a-Si:H. An effective medium approximation and a linear regression analysis have been used to determine the bulk microstructure of the thick (0.3 μm) n layer on quartz as a mixture of volume fractions of a-Si (0.74±0.01), c-Si (0.09±0.02), and void (0.17±0.03). When applied to the thin n layer in the solar-cell configuration, however, the corresponding analysis shows evidence of a 100-A(ring) overlayer of very low density a-Si, not observed on the thicker n-type material, which dominates the dielectric properties of the thin layer. These results are suggestive of nucleation and growth surface microstructure on the 150-A(ring) n layer and lead to the conclusion that, in the fabrication of high-performance a-Si:H based devices using thin layers, such structure must be minimized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335361
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    In situ study of p-type amorphous silicon growth from B2H6:SiH4 mixtures: Surface reactivity and interface effects (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1086-1088 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ ellipsometry provides monolayer sensitivity to the reaction of B2H6:SiH4 doping gas mixtures with p- and i-type plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) surfaces at 180 and 250 °C. This low-temperature reaction, leading to the slow growth (1–3 A(ring)/min) of a-Si:H:B by CVD (without plasma excitation), requires a clean a-Si:H surface and both B2H6 and SiH4 in the doping gas. We suggest that the high B content of CVD a-Si:H:B at p-i and i-p interfaces and on the film-coated regions of single-chamber reactors, may contribute to poor interface characteristics and residual contamination in devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100029
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Surface, interface, and bulk properties of amorphous carbon films characterized by in situ ellipsometry (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2025-2027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous carbon film growth in diamond-like and polymer-like forms has been studied by in situ ellipsometry. The experiments provide accurate values of the optical functions, thickness, and deposition rate in real time. Reactions between the substrate and the gas phase species or film in the initial stages of growth, inaccessible to ex situ probes, have been detected with monolayer resolution. Monolayer changes in near-surface bonding have also been detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99570
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    In situ ellipsometry comparison of the nucleation and growth of sputtered and glow-discharge a-Si:H (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4146-4153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of ellipsometry measurements performed during the growth of hydrogenated amorphous silicon (a-Si:H) thin films on crystalline silicon substrates using ion beam sputtering. The data have been compared to our earlier results for high-quality a-Si:H prepared by glow-discharge decomposition of SiH4, and significant differences in the initial nucleation and microstructural evolution have been deduced for the two types of films. For the glow-discharge a-Si:H, the in situ pseudodielectric function data provided evidence for the convergence of initial growth microstructure in the first ∼50 A(ring), leaving a-Si:H of near bulk Si–Si bond-packing density at the interface to the c-Si substrate. After the nucleation process, growth was found to be nearly layer by layer. The data for the sputtered a-Si:H also reveal the formation of a low-density microstructure in the initial stages of growth. However, in contrast to the glow-discharge films, the microstructure does not converge, and an extensive layer (∼200–400 A(ring)) of bond-packing density lower than the bulk is left at the interface to the substrate. The effect of hydrogen incorporation on this and other aspects of the microstructural evolution of the sputtered films is discussed. Finally, similarities observed between the microstructural evolution of the sputtered films and poorer-quality glow-discharge films provide insights into the growth mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339132
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Interface formation and microstructural evolution in a-SiB: H/a-SiNx@B: H heterostructures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1377-1383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ ellipsometry measurements have been used to determine the optical structure of interfaces during the growth of a-Si@B:H/a-SiNx@B:H heterostructures. We have observed significant deviations of the ellipsometry data from calculations which assume both uniform growth and abrupt interfaces. For the growth of a-SiNx@B:H on a-Si:H such deviations are attributed to a 40 A(ring) layer, less absorbing than bulk a-SiNx@B:H, which is left behind at the interface. This layer appears to result from a higher void density or enhanced N incorporation in the initial 20 s of a-SiNx@B:H growth. It is also possible, however, that a thin layer on the a-Si:H surface is converted to a transparent nitride. In support of the latter possibility, the a-Si:H surface is found to be highly reactive in a N2 plasma: a 150 A(ring) nitride layer is formed during a 10-min exposure time at the same plasma power used for a-SiNx@B:H growth. For the growth of a-Si:H on a-SiNx@B:H, we have found that the interface structure is sensitive to the nitride preparation technique. The evolution of the surface roughness on a-Si:H alternate layers is obtained in real time during the preparation of an a-Si@B:H/a-SiNx@B:H multilayer structure. The implications of these observations for recent interpretations of optical measurements on multilayer structures is treated in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337314
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Surface roughness evolution on glow discharge a-Si:H (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1662-1664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ ellipsometry has been used to probe the evolution of surface roughness over a wide range of film thickness during the growth of glow discharge hydrogenated amorphous silicon (a-Si:H). For a-Si:H prepared with pure SiH4, a 〈5-A(ring) increase in the thickness of the roughness layer is observed during the growth of a ∼4-μm-thick film. In contrast, for a-Si:H prepared with SiH4 highly diluted in Ar, a gradual increase in the roughness layer of ∼100 A(ring) is detected over the same film thickness range. The differences are consistent with recent proposals of different growth mechanisms for the two gas conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338059
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  • 7
    Electronic Resource
    Electronic Resource
    The nucleation and growth of glow-discharge hydrogenated amorphous silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1160-1166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present detailed analysis of in situ ellipsometry measurements taken during the deposition of hydrogenated amorphous silicon (a-Si:H) on crystalline silicon substrates in a conventional rf glow-discharge apparatus. This analysis concentrates on the initial growth data (〈100 A(ring) in thickness) which exhibit measurable deviation from a uniform growth model. Taking into account a surface roughness layer estimated from spectroscopic ellipsometry measurements, the deviation is found to be consistent with a nucleation process whereby the a-Si:H coalesces to bulk density at a thickness of about 55 A(ring). By stopping the glow discharge and restarting it again without changing the deposition parameters, the regrowth process and the nature of the regrowth interface have been studied. We have observed extremes in behavior from renucleation on a scale of 35 A(ring) to the formation of an 80-A(ring)-thick structurally defective layer at the regrowth interface. Such results provide a direct measure of the extent of structurally defective layers at amorphous semiconductor interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336553
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of deposition conditions on the nucleation and growth of glow-discharge a-Si:H (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1869-1882 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ ellipsometry experiments have been used to study the initial nucleation and growth of glow-discharge hydrogenated amorphous silicon (a-Si:H) deposited on c-Si substrates under different conditions. The substrate temperature (Ts), dc bias, and silane concentration in both hydrogen and inert gas diluents were varied. In the first ∼30–60 A(ring) of film growth, deviations of the in situ ellipsometry data from models assuming thickness independent dielectric functions are observed for a-Si:H prepared under conditions that lead to a low density of electronic defects. The form of the deviations in the in situ data appear to be consistent with the development and convergence of densely packed clusters with a lateral extent of ∼20–30 A(ring), not with a well-dispersed distribution. The deviations disappear for Ts less than ∼200 °C and for flow ratios less than 1:20 (SiH4):(diluent). The low Ts effect is attributed to the lack of development of the initial growth microstructure caused by (1) the low mobility and desorption rate of surface radicals and/or (2) the low average coordination number due to ineffective hydrogen elimination. The low SiH4:diluent ratio effect is attributed to the lack of effective convergence of the initial growth microstructure since film formation may be limited, not by hydrogen elimination and surface reaction, but by radical flux arriving at the surface. The effect of deposition parameters on the bulk bonding density, surface roughness, and the interface structure is also presented. At very low SiH4:diluent ratios, it has been instructive to consider the damage mechanisms induced by the pure diluent plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338032
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of substrate structure on the growth of hydrogenated amorphous silicon studied by in situ ellipsometry (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4169-4176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using in situ ellipsometry as a probe, the effect of substrate microstructure on the growth habit of high-quality hydrogenated amorphous silicon (a-Si:H) has been studied. An understanding of the growth process is important when combining a-Si:H with other materials in thin-film multilayer devices. The present study concentrates on cases where a-Si:H of different microstructure, microcrystalline Si:H (μc-Si:H), and single-crystal Si are used as substrates. The a-Si:H top film is grown under identical conditions on each substrate material and pseudo-dielectric-function trajectories are collected during growth. These trajectories have been applied to characterize the bulk and interface structure and the evolution of surface roughness layers during growth. For the same deposition conditions, a range of growth patterns is observed, depending on the structure of the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337501
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  • 10
    Electronic Resource
    Electronic Resource
    Optical properties of dense thin-film Si and Ge prepared by ion-beam sputtering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 954-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of ion-beam-sputtered Si and Ge have been measured using spectroscopic ellipsometry over the range of 2.5–5.0 eV. Measurements have been performed on films prepared at different substrate temperatures (Ts) . An analysis of the spectroscopic ellipsometry data using the Bruggeman effective medium approximation reveals that very dense polycrystalline Si ( p-Si) and Ge ( p-Ge) films are obtained (without postdeposition heat treatment) for Ts ≥350 °C and Ts ≥200 °C, respectively. Maintaining a sufficiently high Ar beam voltage in the sputtering process is shown to be beneficial to the densification of p-Si. Discrepancies observed between the structure of the p-Si deduced from Raman and ellipsometry spectra are also addressed. The ellipsometry data are effective in detecting heterogeneity possibly due to surface roughness for the p-Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336172
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