GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (5)
Document type
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Room-temperature observation of resonant tunneling through an AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1422-1424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first room-temperature observation of resonant tunneling through a double-barrier diode with a 31.5-nm-wide AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy. As the bias voltage is scanned from 0 to 4 V, 11 resonant tunneling transitions are observed at room temperature. At 77 K, 13 resonant tunneling transitions are observed; 10 of them show negative differential resistance, and the highest peak-to-valley ratio is 1.4. At 4.2 K, 17 resonant tunneling transitions are observed; 15 of them show negative differential resistance, and the peak-to-valley ratio of the first tunneling peak is 3.6. Computer simulation indicates that for the 17 resonant tunneling transitions, the first 13 are likely due to resonant tunneling through quasibound states in the well, and the remainder are due to resonant tunneling through virtual states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99135
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Lateral resonant tunneling field-effect transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1982-1984 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lateral resonant tunneling field-effect transistor (RTFET) is proposed. The RTFET has three closely spaced, but independent gate electrodes. The two outer gates create lateral double potential barriers in the channel, and control the barrier heights. The inner gate controls the potential of the quantum well between the barriers. These gates are capacitively coupled to the barriers and well; therefore, very small gate currents and high input impedences result. Modeling and computer simulations show that when the potential of the quantum well is scanned, the RTFET should have a better peak-to-valley ratio, narrower current peak widths, and more uniform distribution of peak and valley currents than that of a resonant tunneling diode with the same barriers and well. The independent control of the barrier heights allows us to adjust continuously the peak-to-valley ratio, amplitude, and position of current peaks. Furthermore, using an additional back gate, the peak-to-valley ratio and amplitude of peak current can also be adjusted by changing the carrier concentration next to the double barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99656
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling of electrons of one or two degrees of freedom (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 657-659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical expressions for the tunneling current of electrons with one or two degrees of freedom (DOF), due to additional quantum confinement transverse to the electron transport direction, are explicitly derived, analyzed, and implemented into computer simulations. The results are compared with the well-known case in which 3-DOF electrons tunnel through a one-dimensional double-barrier well. The results show that the singularity of the density of states in a one-dimensional system will not manifest sharp features in tunneling current, and that when the spacing between the Fermi energy and bottom of conduction band is the same, the tunneling current peak becomes broader and the peak-to-valley ratio becomes smaller as the number of degrees of freedom of the electrons is reduced. The results also show that when scattering is neglected, the energy quantization due to transverse confinement in 1- or 2-DOF systems will not contribute any additional peaks to the tunneling current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99365
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 176-178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new lateral resonant tunneling field-effect transistor (LARTFET) has been fabricated using molecular beam epitaxy and ultrahigh-resolution electron beam lithography. The LARTFET has two 80-nm-long gate electrodes separated by 100 nm. The dual gates create double potential barriers in the channel and a quantum well in between. Conductance oscillations are observed, which, for the first time, indicate electron resonant tunneling through the energy states in a lateral double-barrier quantum well formed electrostatically. Furthermore, after illumination, two additional negative transconductance peaks are observed. These additional peaks may be related to electron resonant tunneling through the donor-related deep levels in silicon-doped Al0.35Ga0.65As .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102113
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Ion implantation into gallium arsenide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3429-3438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion-mass-spectrometry studies of the implantation profiles of 20- to 400-keV Si, Se, and Be ions into GaAs are reported. The measured profiles are fit with Pearson-IV distributions whose moments are fit to functions of the ion energy to obtain simple, widely applicable analytical formulas. Also, profiles are measured for varying wafer tilt and rotation angles to the ion beam, and for varying dislocation densities and doses. For implantation through dielectric caps, the profiles in the GaAs can be simulated using shifted, bare-wafer Pearson-IV distributions for Be, or mixtures of shifted Pearson-IV and Gaussians for Si and Se. Also, knock-on distributions of Si and O atoms resulting from implanting through SiO2 caps were measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341475
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...