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  • 1
    Online Resource
    Online Resource
    Magnetic Domains in Epitaxial (100) Fe Thin Films
    Springer Science and Business Media LLC ; 1989
    In:  MRS Proceedings Vol. 151 ( 1989)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 151 ( 1989)
    Abstract: By use of Kerr microscopy, the domain patterns of thin Fe films (10 nm) grown on In x Ga 1-x As (0.09 ≤ x ≤ 0.25)/GaAs substrates have been investigated. For This nvestigation, two types of InGaAs buffer layers were prepared. One consisted of a single, thick InGaAs layer and the second composed of an InGaAs strained layer superlattice. Both were grown on (100) GaAs substrates. The study showed that many of the domain walls were approximately parallel to the easy axis of Fe for those films grown on the low x alloy, e.g. x-0.1, InGaAs buffer layers. In the alloy films with larger values of x, e.g. x-0.2, the domain pattern of the Fe overlayer was strongly influenced by dislocations of the strain relieved InGaAs buffer layer. These dislocations manifested themselves as corrugations parallel to the 〈 110 〉 directions in the InGaAs. Kerr microscopy of a x-0.2 film indicated the presence of long, narrow domains with their long axes parallel to the striations. Although shape anisotropy arguments predicted that the magnetization should be parallel to the striations, magnetometer data indicated that a substantial component of magnetization was oriented perpendicular to the corrugations at low fields. The Fe film grown on the superlattice had magnetic domains very similar to a thick Fe film (0.5 μm) grown on GaAs.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-151-213
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1989
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  • 2
    Online Resource
    Online Resource
    Layer by layer growth of FeAl on InP(100) substrates
    American Vacuum Society ; 1989
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 7, No. 4 ( 1989-07-01), p. 733-736
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 7, No. 4 ( 1989-07-01), p. 733-736
    Abstract: Thin films of FexAly have been grown by molecular-beam epitaxy on InP(100) substrates. Before growth of the epitaxial intermetallic alloy a 0.2-μm InAlAs buffer and a ten-layer AlAs diffusion barrier were deposited. Initial films were grown at 200 °C and were stable up to at least 600 °C. Upon the initiation of growth the reflection high-energy electron diffraction intensity was observed to decrease slowly and then exhibited oscillations corresponding to layer-by-layer growth. There was a short incubation period before the onset of the intensity oscillations that depended upon the ratio of the Fe and Al fluxes. The shape of the specular beam was measured versus incident angle and indicates that the surface is nearly as smooth as the starting AlAs surface. Upon heating to 550 °C the beams became sharper yet. Growth on the annealed surface at 200 °C gave intensity oscillations that were an order of magnitude stronger. Initial attempts to grow epitaxial AlAs on top of the FeAl layer showed three-dimensional island growth.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.584635
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1989
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    Magnetic properties of molecular-beam epitaxial grown (100) iron films
    AIP Publishing ; 1988
    In:  Journal of Applied Physics Vol. 63, No. 8 ( 1988-04-15), p. 3662-3663
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 63, No. 8 ( 1988-04-15), p. 3662-3663
    Abstract: The magnetic properties of epitaxial iron films have been studied. The iron films were grown on {100} GaAs and GaInAs substrates. Both the magnitude of the anisotropy energies and direction of the easy axes were studied using a SQUID magnetometer. In particular, measurements were made of the magnetization in the plane of the film along the 〈100〉 and 〈110〉 directions. From these measurements the magnitude of the anisotropy energy and the direction of the easy axis were determined. Also measurements of the coercivity of the films were made using a magneto-optic Kerr effect system. These results are compared with those determined previously for iron films grown on GaAs.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.340677
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1988
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    Substrate modified growth of epitaxial Fe films (abstract)
    AIP Publishing ; 1988
    In:  Journal of Applied Physics Vol. 63, No. 8 ( 1988-04-15), p. 3672-3672
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 63, No. 8 ( 1988-04-15), p. 3672-3672
    Abstract: It is now clear that both the atomic and magnetic properties of epitaxial Fe films can be controlled by the precise nature of the substrate which acts as the template for the growth. We have investigated the role of defects and strain arising from lattice mismatch on the growth and the magnetic properties of the Fe films. The films were grown by molecular-beam epitaxy (MBE) on three different well characterized surfaces: GaAs(100), In0.2Ga0.8As(100), and Fe(100). The first two surfaces were also prepared by MBE. This mole fraction of In was chosen to match the lattice constant of bulk α-Fe. The growth of the Fe film was characterized by using reflection high-energy electron diffraction (RHEED) and the results indicate that the morphology of the Fe films is smoother on the InGaAs surface than on the GaAs surface. Yet is is still much rougher than the growth on Fe(100) substrate. The magnetic properties were measured by using a SQUID magnetometer and coercivity values are comparable to that of the films grown on ZnSe.1
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.340681
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1988
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    Summary Abstract: Layer-by-layer evaporation of GaAs (001)
    American Vacuum Society ; 1985
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 3, No. 4 ( 1985-07-01), p. 1116-1117
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 3, No. 4 ( 1985-07-01), p. 1116-1117
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.583064
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1985
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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