In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 25, No. 1A ( 1986-01-01), p. L54-
Abstract:
A guiding principle has been proposed for the preparation of high-photosensitive hydrogenated amorphous Si–Ge alloys (a-SiGe:H) via the plasma chemical-vapor-deposition technique. According to this principle, plasma parameters in a diode-type reactor were systematically controlled, resulting in high-quality a-SiGe:H films in the optical-gap range between 1.4 and 1.8 eV. Photoconductivity-to-dark-conductivity ratio of the best-designed a-SiGe:H with 1.45 eV optical gap was found to reach 10 4 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1986
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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