In:
Applied Physics Letters, AIP Publishing, Vol. 54, No. 14 ( 1989-04-03), p. 1338-1340
Abstract:
InAs layers were epitaxially grown directly on GaAs, InP, and GaSb at relatively low temperatures by plasma-assisted epitaxy (PAE) in hydrogen plasma. The electronic and crystallographic properties of PAE-InAs grown on substrates with different lattice mismatch were comparatively studied with a variable supply ratio As/In, growth temperature, and thickness of grown films. The electronic properties of PAE-InAs films comparable to those by molecular beam epitaxy (MBE) were obtained in a wide range of supply ratio, with less supply ratio, and at lower temperatures than MBE.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1989
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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