In:
Journal of Applied Physics, AIP Publishing, Vol. 59, No. 11 ( 1986-06-01), p. 3847-3850
Abstract:
Molecular-beam epitaxial GaAs/AlGaAs bulk layers and quantum well heterostructures have been grown and characterized at 3 K using broadband optical reflectance and photoluminescence spectroscopy. Reflectance spectra display sharp, well-defined features due to strong near-band gap excitonic effects that cause the reflectance to deviate by over 50% from the bulk value in some cases. Features due to impurity-bound excitons, free-to-bound transitions, and free excitons have all been identified in quantum well heterostructures. Interband transitions involving the n=1 light hole and higher-lying subbands are much more readily observed in reflectance spectra than in photoluminescence, including ‘‘forbidden’’ Δn≠0 transitions. Additionally, reflectance has been used to probe the interfaces, revealing fine structure due to monolayer and submonolayer deviations in well thickness.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1986
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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