In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 25, No. 6A ( 1986-06-01), p. L498-
Abstract:
A new transverse-mode stabilizing self-aligned structure for (GaAl)As laser diodes by metal organic chemical vapor deposition (MOCVD) is developed. This structure is characterized by an n-GaAs layer grown selectively outside of a mesa stripe using an SiO 2 mask. To control the distance between active and n-GaAs layers a highly selective (GaAl)As etching technique by boiled HCl is used. Furthermore, the laser diodes can operate in the fundamental transverse-mode at light output power up to 70 mW with a threshold current of 60 mA under CW operation at lasing wavelengths of 750–760 nm.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.25.L498
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1986
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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