In:
Applied Physics Letters, AIP Publishing, Vol. 52, No. 9 ( 1988-02-29), p. 703-705
Abstract:
A compound-semiconductor device simulator, in which deep levels in the semi-insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi-insulating InP buried heterostructure laser diodes were investigated. The leakage current, without passing through the active region, was found to be small when the trap density in the semi-insulating InP layers is more than 3×1015 cm−3 and less than 1×1016 cm−3. This simulator will be a useful tool in predicting the semi-insulating properties of electrical and optical semiconductor devices.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1988
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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