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  • 1985-1989  (4)
Material
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Language
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  • 1985-1989  (4)
Year
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Photoquenching and Recovery Effects of EL2 Absorption in GaAs
    IOP Publishing ; 1988
    In:  Japanese Journal of Applied Physics Vol. 27, No. 1A ( 1988-01-01), p. L101-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 27, No. 1A ( 1988-01-01), p. L101-
    Abstract: Optical absorption spectroscopy on the major midgap donor (EL2) in GaAs shows that the metastable state of the EL2 level (EL2 * ) can be optically recovered to the normal state (EL2 0 ) at 11 K. On the basis of the transient properties of the photoquenching and recovery effects, we suggest that these effects occur as a result of a dynamic balance between the EL2 0 →EL2 * and EL2 * →EL2 0 transitions.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.27.L101
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1988
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Spectral shape analysis of selective pair luminescence in GaAs
    AIP Publishing ; 1988
    In:  Journal of Applied Physics Vol. 63, No. 11 ( 1988-06-01), p. 5454-5459
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 63, No. 11 ( 1988-06-01), p. 5454-5459
    Abstract: We have analyzed the spectral shape of the selective pair luminescence (SPL) in undoped semi-insulating Czochralski grown GaAs. The shape of the SPL spectra, consisting of sharp peaks and a broadband, depends strongly on the excitation photon energy, the excitation intensity, and the acceptor concentrations. The characteristic spectral variations are successfully explained by a simple model in which the probability density function of separation for photoexcited donor acceptor pairs are calculated under the various experimental conditions. On the basis of the theoretical calculation the improvement of the higher and lower detection limits for acceptor impurities is demonstrated.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.340367
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1988
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
    IOP Publishing ; 1987
    In:  Japanese Journal of Applied Physics Vol. 26, No. 6A ( 1987-06-01), p. L1060-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 6A ( 1987-06-01), p. L1060-
    Abstract: The transition mechanism of the 0.6 eV luminescence band, observed commonly in undoped semi-insulating GaAs crystals under the above band-gap excitation (AGE), has been investigated by photoluminescence excitation spectroscopy. We show that the 0.6 eV AGE band consists of the 0.63 and 0.68 eV bands with the same recombination processes as in the case of the below band-gap excitation. The peak of the 0.6 eV AGE band shifts with the excitation photon energy as a result of the discontinuity in the excitation spectrum of the 0.68 eV band. This discontinuity is explained by the presence of the excitation process via the excited state of the EL2 level resonant with the conduction band.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.26.L1060
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1987
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Charge State Density Profiling of EL2 Deep Donor in GaAs Using Selective Excitation Luminescence
    IOP Publishing ; 1989
    In:  Japanese Journal of Applied Physics Vol. 28, No. 5A ( 1989-05-01), p. L841-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 5A ( 1989-05-01), p. L841-
    Abstract: The distributions of both ionized and neutral states of the dominant midgap donor EL2 in undoped, liquid-encapsulated, Czochralski-grown GaAs have been investigated by selective excitation luminescence. The intensity variations of the 0.63 and 0.68 eV emission bands, excited selectively by the 1.46 and 0.94 eV light, reflect the distribution of the neutral and ionized states of the EL2 level, respectively, because the initial states of the excitation processes of the two bands are the neutral and ionized states. In an as-grown wafer, the U-shaped profile across a wafer diameter has been observed for both EL2 0 and EL2 + distributions, suggesting that the total EL2 distribution is not uniform, but U-shaped.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.28.L841
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1989
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
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