In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 5, No. 4 ( 1987-07-01), p. 1271-1274
Abstract:
A method is proposed to acquire secondary ion images of poorly conducting samples with a common scanning Auger microscopy/secondary ion mass spectrometry system. In the region of the primary ion beam spot (which does not move and with ∼2-mm diameter), a fine focused electron beam (∼1-μm diameter) was used for charge compensation. When it was moved inside the spot, the secondary ion signal varied obviously and an image using this signal was formed. The contrast of this image results from charge compensation, and we expect that some relevant information, such as distribution of conductivity in a very small area, can be acquired. The results show that it may be used to find a failure point on an integrated circuit where a short circuit or an open circuit exists. Under proper conditions, element maps including hydrogen were also obtained.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1987
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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