In:
Journal of Applied Physics, AIP Publishing, Vol. 60, No. 7 ( 1986-10-01), p. 2357-2360
Abstract:
CoxIn2S3+x thin films with various relative compositions were grown on thoroughly cleaned glass plates by the spray pyrolysis method. The substrate temperature during growth was maintained at 270 °C and the film then annealed in a vacuum chamber at 2×10−5 Torr at 500 °C for 30 min. The grown CoxIn2S3+x thin films, which had a composition of x=0.0–0.6, showed the tetragonal structure of In2S3, but above x=0.6 the films were amorphous. The energy gap for these films decreased with increasing x composition, and the impurity absorption spectra in near infrared region, ascribed to Co2+ ions, were observed at 13 333, 5970, and 4166 cm−1, which are the 4A2(F)−4T1(P), 4A2(F)−4T1(F), and 4A2(F)−4T2(F) transitions, respectively.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1986
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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