In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 27, No. 2A ( 1988-02-01), p. L170-
Kurzfassung:
Ultrathin CaF 2 films heteroepitaxially grown on Si(111) substrates have been characterized by low-energy electron energy loss spectroscopy and Auger electron spectroscopy. The measured specimens were transferred from the growth chamber to an analyzing chamber located at a distant facility without suffering any contamination by use of a newly developed portable vacuum chamber. It has been proved from the measurements that a CaF 2 film of good quality grows even from the very initial stage of epitaxy.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.27.L170
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1988
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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