In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 1R ( 1989-01-01), p. 140-
Abstract:
The optical band gap of electron-beam-evaporated silicon films doped with antimony and boron is determined in both amorphous and microcrystalline structures. The value in the amorphous structure is 1.5 eV for the Sb-doped case, the same as the intrinsic case, while for B-doping, the gap is sharply decreased to 1.0 eV. For the microcrystalline structure, the values are all 1.7 eV for Sb- and B- doped cases as well as the intrinsic case.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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