In:
Applied Physics Letters, AIP Publishing, Vol. 53, No. 26 ( 1988-12-26), p. 2617-2619
Abstract:
The effect of thermal quenching on the characteristics of hydrogenated amorphous silicon thin-film transistors using amorphous silicon nitride as a gate insulator has been studied. We find that rapid quenching produces changes in the field-effect conductance which are completely reversed by annealing. Rapid quenching produces a decrease in the off conductance and an increase of the on conductance. The decrease of the off conductance is due to the increase of the dangling bond density. On the other hand, the increase of the on conductance can be explained as either the decrease of the interface state density between amorphous silicon and the silicon nitride or the decrease in source series resistance by thermal quenching.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1988
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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