In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 7R ( 1987-07-01), p. 1107-
Abstract:
High-quality a-SiGe:H films have been prepared by photochemical vapor deposition (photo-CVD) with a high dilution ratio of H 2 . Films with a bandgap of 1.55 eV has a photoconductivity of 1.6×10 -4 S/cm (AM1, 100 mW/cm 2 ). Solar cells of the p - i - n type were fabricated by applying such high-quality a-SiGe:H films to the i -layer. The performance of a-SiGe:H solar cells has been drastically improved by introducing graded-bandgap layers at the p / i and i / n hetero-interfaces. At present, a conversion efficiency of 8.65% with high collection efficiencies in the long-wavelength region has been achieved with 1.57 eV bandgap material.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.26.1107
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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