In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 7A ( 1987-07-01), p. L1161-
Abstract:
High quality InGaAsP layers could be grown for a short growth period, even if the growth was performed inside the immiscible region. When a quaternary solution was prepared for the growth of InGaAsP/GaAs (111)A with E g ∼1.7 eV (77 K), a good layer with narrow PL half width was grown for a growth time shorter than 5 min. This is attributed to the stabilization of the growth by the strain energy induced by the lattice mismatch. A layer with large E g (∼1.8 eV at 77 K) and broad PL half width was precipitated for a growth time longer than 20 min due to the phase decomposition.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.26.L1161
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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