Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 2662-2671
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Three generalized models covering a wide range of ionized impurity densities, NA and ND, have been put forward for undegenerate semiconductor step p-n junctions at equilibrium. They contain the exact electric field and the potential at the interface of a junction, and give a satisfactory field distribution and potential distribution. In limiting cases they reduce to the traditional depletion model given by Shockley and the one-side junction model by van de Wiele and Demoulin. The proposed models can be applied to low-injection junctions. The electric field and the potential as functions of position given in this paper can also be used in other step junctions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335900
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