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  • American Institute of Physics (AIP)  (4)
  • 1985-1989  (4)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2087-2090 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possible analog gain in Cooper-pair tunneling mode in a current injection Josephson network is theoretically investigated. The network consists of three Josephson junctions A, B, and C, and its gain can be widely controlled by varying the external shunt resistances of junctions B and C. Two different configurations of the planar structure of the network are suggested and their detailed principles of operation are explained. It is expected that the network will function at a higher speed than that possible in an amplifying device working in quasiparticle mode. A comparison between the present network and Faris QUITERON is also given.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4909-4915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning electron microscope was used in the voltage contrast mode to examine the relationship between dynamic secondary electron emission from passivated devices and buried structure depth. A primary electron beam energy of 500 eV was used. Depth measurement was performed on floating structures with an average error of 6.59%, 4.93% standard deviation, over a depth range of 0.04–0.76 μm. Further, a method of producing capacitive coupling voltage contast (CCVC) images of unbiased devices was developed, having a spatial resolution of better than 1 μm micron through passivation. A modified version of the Gorlich model for CCVC decay is presented to explain the experimental results [S. Gorlich, K. D. Herrmann, and E. Kubalek, in Proceedings of the Microcircuit Engineering 84 Conference (Academic, London, 1985)].
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2072-2076 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of thin films are known to be affected by microstructural inhomogeneities. In this paper we study, using ellipsometry, the influence of microstructural disorder on the refractive index at 632.8 nm and on its dependence on temperature in the range 300–700 K in the case of thin noncrystalline low-pressure chemical-vapor deposition silicon films. It is found that films with large amorphous component have a behavior distinct from that shown by polycrystalline films. In particular, both the refractive index n and the thermo-optic coefficient dn/dT at room temperature have larger values for amorphous films than for polysilicon films. Furthermore, the thermo-optic coefficient dn/dT is found to vanish at about 500 K in the case of highly noncrystalline films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4094-4095 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report ac-susceptibility measurements on the Laves phase compounds Ce (Fe1−xRux)2 with x=0.02, 0.04, and 0.06. The results show that the ferromagnetic alignment of Fe moments seems to be very easily disrupted by substitution of Ru on the Fe sites. All the three compounds, as well as showing the para- to ferromagnetic transition, indicate another transition at lower temperature. In the case of the x=0.02 compound, the character of the susceptibility at the lower transition is similar to that seen in reentrant spin glasses, while in the compounds richer in Ru the suppression of the low-field response is much more drastic.
    Type of Medium: Electronic Resource
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