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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (172)
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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (172)
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  • 1
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 0, No. 0 ( 2023), p. 0-
    Abstract: Realization of high performance of EXL-50U plasma rely on neutral beam heating sensitively, which means the beam ions should have a good confinement. The paper gives unacceptable ripple loss results, both on beam ion loss fraction and localized heat load, based on equilibrium, beam ion distribution and ripple data in integrated modeling. The optimization method consist of lower the ripple perturbation amplitude, increase the plasma current and optimization of NBI injection geometry. Calculation results indicate the plasma region should move to high field side and FI to lower the ripple field, increase the Ip above 600kA, beam ion loss fraction can be lower to 3-4%, heat load down to one magnitude. The paper conclude the method of fast ion ripple loss evaluation, including phase space and full calculation within one slowing down time. Also in the paper have other direction of how to lower ripple loss when design a new facility, this will help for integrated modeling and plasma operation.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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  • 2
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 72, No. 17 ( 2023), p. 177701-
    Abstract: The electro-optical properties of polymer dispersed liquid crystal film vary with liquid crystal content and externally applied electric field, but the analysis of the film morphology cannot directly reflect the mechanism of electro-optical properties. Therefore, the polymer dispersed liquid crystal film prepared by blending liquid crystal material E7 and photopolymer NOA65 is used. Herein, the dielectric polarization regulated electro-optical properties and their related mechanisms under different liquid crystal content and electric fields are revealed. The results show that in a frequency range of 10〈sup〉–1〈/sup〉–10〈sup〉6〈/sup〉 Hz, the film exhibits three relaxation processes respectively at low frequency, medium frequency and high frequency, which are generated by thermionic polarization, interfacial polarization and orientation polarization. According to the Arrhenius equation, the activation energy values of such polarization processes are calculated. It is found that with the increase of liquid crystal content, the activation energy of orientation polarization decreases from 0.88 eV to 0.83 eV, leading the threshold field strength and the saturation field strength of the diversion of liquid crystal molecule to decrease. Thermionic polarization under DC electric field forms an internal electric field, which causes the threshold field strength and saturation field strength to increase greatly, as compared with the scenarios under AC electric field. Such a thermionic polarization also leads the polarization relaxation time to increase, resulting in the extension of response time. This study is of guiding significance in further analyzing and improving the electro-optical properties of polymer dispersed liquid crystal films.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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  • 3
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 72, No. 19 ( 2023), p. 196101-
    Abstract: 〈sec〉GaN materials are widely used in optoelectronic devices, high-power devices and high-frequency microwave devices because of their excellent characteristics, such as wide frequency band, high breakdown electric field, high thermal conductivity, and direct band gap. Owing to the large lattice mismatch and thermal mismatch brought by the heterogeneous epitaxy of GaN material, the GaN epitaxial layer will produce a great many dislocations in the growth process, resulting in the poor crystal quality of GaN material and the difficulty in further improving the device performance. Therefore, researchers have proposed the use of vicinal substrate to reduce the dislocation density of GaN material, but the dislocation annihilation mechanism in GaN film on vicinal substrate has not been sufficiently studied. Therefore, in this paper, GaN thin films are grown on vicinal sapphire substrates at different angles by using metal organic chemical vapor deposition technique. Atomic force microscope, high resolution X-ray diffractometer, photoluminescence testing, and transmission electron microscopy are used to analyze in detail the effects of vicinal substrates on GaN materials. The use of vicinal substrates can significantly reduce the dislocation density of GaN materials, but lead to degradation of their surface morphology morphologies. And the larger the substrate vicinal angle, the lower the dislocation density of the sample is. The dislocation density of the sample with a 5º bevel cut on the substrate is reduced by about one-third compared to that of the sample with a flat substrate. The special dislocation termination on the mitered substrate is observed by transmission electron microscopy, which is one of the main reasons for the reducing the dislocation density on the mitered substrate. The step merging on the vicinal sapphire substrate surface leads to both transverse growth and longitudinal growth of GaN in the growth process. The transverse growth region blocks the dislocations, resulting in an abrupt interruption of the dislocations during propagation, which in turn reduces the dislocation density.〈/sec〉〈sec〉Based on the above phenomena, a model of GaN growth on vicinal substrate is proposed to explain the reason why the quality of GaN crystal can be improved by vicinal substrate.〈/sec〉
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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  • 4
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 48, No. 3 ( 1999), p. 556-
    Abstract: We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods.Two deep levels were obtained with thermal activation energies of Ec-Et1=0.42eV and Ec-Et2=0.59eV,whose capture cross sections are 6.27×10-17cm2 and 6.49×10-20 cm2,where Et1 and Et2 are Si-related and O-related deep levels,respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP.The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1999
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  • 5
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 64, No. 14 ( 2015), p. 144101-
    Abstract: In this paper, we realize the electrically coupled resonances between two metamaterial resonators based on two metal split-ring resonators gap-to-gap placed. The theoretical analysis and numerical calculation of the microwave equivalent circuit of the electrically coupled metamaterial resonators are performed. The results show that there are two resonance frequencies produced by the two coupled metamaterial resonators. For the two resonance frequencies, one gradually shifts towards the lower frequency with the coupling strength increasing, while the other is fixed at the resonance frequency of the single metamaterial resonator. The measured and simulated results of the microwave transmission spectra show that the two resonance peaks move respectively towards the lower and higher frequency with the coupling strength increasing. The analysis shows that the lower resonance frequency is mainly determined by the electrical coupling strength between the two metamaterial resonators, and the difference between the higher resonance frequency and the resonance frequency of the single resonator is mainly caused by the inevitable magnetic coupling between the two resonators. Moreover, the smaller the coupling space, the greater the influence of magnetic coupling is. The proposed dual resonance property and its tunability based on the electromagnetic coupling between the two metamaterial resonators greatly enhance the scopes of the design and application for metamaterials.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2015
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  • 6
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 0, No. 0 ( 2023), p. 0-
    Abstract: Establishment and sustainment of the structure of internal transport barriers (ITBs) is an important guarantee for the magnetic fusion plasmas. The related physics process for the establishing and sustaining of ITBs with $q_{min} \simeq$ 2 is simply summarized:the "off-axis sawteeth" (OAS) and double tearing modes instability, fast ions induced Alfvén eigenmodes, thermal pressure gradient induced low-frequency modes (LFMs) instability, etc. Firstly, the burst of "off-axis sawteeth" (OAS) is an important criterion for the evaluating of reversed $q$-profile with $q_{min} \simeq$ 2. The excitation conditions, classification and the structure of precursor mode of OAS are given in detailed, and the collapse event is triggered by the magnetic reconnection of $m$/$n$=2/1 double tearing modes (DTM). Secondly, the beta-induced Alfvén eigenmodes (BAEs) and reversed shear Alfvén eigenmodes (RSAEs) are easily excited by the fast ions during the oscillation of OAS. The toroidal mode numbers of the two kinds of Alfvén waves are 1 $\leq n \leq$ 5, which are located at 1.98 $\leq R \leq$ 2.07 m with normalized minor radius 0.2 $\leq \rho \leq$ 0.45. The excitation conditions are investigated for the condition of $q_{min} \simeq$ 2:and three different physical variables of thermal pressure gradient, fast ions distribution function, and the toroidal flow or flow shear are considered. Thirdly, the low-frequency modes (LFMs) instabilities are excited by the pressure gradient during the oscillation of OAS. The general fishbone like dispersion relationship (GFLDR) is adopted for solving the basic features of LFMs:① the frequency of LFMs scale with ions diamagnetic frequency; ② the LFMs has the Alfvén polarization direction; ③ the LFMs are reactive-type kinetic ballooning modes. The excitation of LFMs is not relied on the fast ions, which is taken place at higher pressure gradient regime $\alpha \propto (1 + \tau) (1 + \eta_i)$, $\tau=T_e/T_i$, $\eta_i=L_{n_i}/L_{T_i}$. In the end, the suppression of OAS and establishment of ITBs are achieved. Three important processes are contained for the condition of $q_{min} \simeq$ 2 in EAST:① the tangential injection (NBI1L) of NBI is more easier for the suppression of OAS in comparison with the perpendicular injection (NBI1R); ② the micro-instability can be suppressed during the oscillation of OAS, and the reversed shear $q$-profile is more favorable in the establishment of the structure of ITBs; ③ the establishment of ITBs is accompanied by the excitation of Alfvén waves instabilities (bigger toroidal mode number:1 $\leq n \leq$ 5), the sustainment of ITBs is accompanied by the thermal ions temperature gradient induced instability (median size:5 $\leq n \leq$ 10). Therefore, understanding the establishment and suppression of OAS, the excitation of Alfvén wave instability and the redistributed fast ions, the related instability of thermal pressure gradient, which are important for the establishment of ITBs.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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  • 7
    Online Resource
    Online Resource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2023
    In:  Acta Physica Sinica Vol. 0, No. 0 ( 2023), p. 0-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 0, No. 0 ( 2023), p. 0-
    Abstract: With the shrink of critical dimensions of semiconductor devices to a few nanometers, atomic layer etching (ALE) has become an important technique to achieve single-atom resolution. ALE decouples plasma etching into two self-limiting reaction processes:passivation and etching processes, allowing for sequential removal of material atomic layer by layer. Therefore, it suffers from the issue of low etch rate. In this paper, the variation in surface substance coverage during the passivation and etching processes is investigated numerically to optimize the duration for both passivation and etching. A coupled model incorporating a two-dimensional inductively coupled plasma discharge chamber model, a one-dimensional sheath model, and a three-dimensional etching trench model is developed and applied to investigate the optimal time for one single cycle ALE of silicon with the use of Ar/Cl〈sub〉2〈/sub〉 gases under the condition of Ar inductively coupled plasma discharge. The results indicate that during thepassivation stage, the surface coverage of SiCl and SiCl〈sub〉2〈/sub〉 initially increases with time and then decreases, while the surface coverage of SiCl〈sub〉3〈/sub〉 continuously increases, and eventually, the surface coverage of these three species stabilize. When the surface is predominantly covered by SiCl〈sub〉2〈/sub〉, it is the optimal time to trigger the etching process, which induces to a relatively favorable surface state and a relatively short etching time. Comparing with typical ALE etching techniques, the time of our optimal ALE single cycle has been shortened at about 33.89%. The ALE cycle time (etching rate) exhibits a linear relationship with the aspect ratio. Additionally, the durations of the passivation and etching processes. increases linearly with the aspect ratio or etch depth. Moreover, as the etch depth increases, the effect of the passivation process on the ALE rate becomes more significant than that of the etching process.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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  • 8
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 6 ( 2013), p. 060705-
    Abstract: In this paper, an X-ray communication program, which consists of a sender of grid controlled X-ray source and a receiver of X-ray single-photon detector based on micro-channel plate, is presented. With the detailed information about the signal modulation transmitter, the micro-channel-based X-ray single-photon detector as well as the signal receiving demodulator, a space audio communication system based on X-ray is built. The communication rate of more than 20 kbit/s is realized. According to the preliminary test result analyses of the X-ray space audio communication system test, the X-ray emission success rate restricts the communication speed by the influence of different X-ray intensities, signal shaping time and threshold settings respectively. Therefore, a scheme for further increasing X-ray communication performance is suggested.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2013
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  • 9
    Online Resource
    Online Resource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2001
    In:  Acta Physica Sinica Vol. 50, No. 9 ( 2001), p. 1763-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 50, No. 9 ( 2001), p. 1763-
    Abstract: We present the results of the Austin-Model 1 (AM1) geometry optimizations aimed at determining the charged geometry properties of -(PA)4-(PPP)m-(PA)4- triblock copolymers that have the well-barrier-well structure. The distributions of the doped charges depend upon the density of doped charges and the length of the barrier.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2001
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  • 10
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 11 ( 2022), p. 114203-
    Abstract: The 1.8–2.0 μm waveband contains abundant absorption lines of water, which are much stronger than those in the traditional 1.3–1.5 μm waveband, exhibiting huge potentials for absorption spectrum applications of water. In the hyperspectral absorption spectrum, physical parameters of the target molecule can be derived from lots of absorption lines within a broadband scanning range, achieving the results more robust, accurate and versatile than the results from the conventional tunable diode laser absorption spectrum in which only one or two absorption lines are used. The key to hyperspectral absorption is the development of broadband tunable, narrow linewidth laser sources emitting in the wavelength range of interest. With a tunable fiber FP filter and a fiber saturable absorber, a Tm-doped fiber laser is established, featuring broadband tenability and narrow linewidth. Taking advantage of the re-absorption characteristics of Tm-doped silica fibers, a wavelength tuning range covering 60 nm from 1910–1970 nm is obtained through the appropriately designing of the active fiber length. The measured laser linewidth at steady state is smaller than 0.1 nm, which is suitable for water absorption spectrum. Hyperspectral absorption measurements of water in air and alcohol flame are conducted. In room-temperature air, more than 40 absorption lines are recognized within a tuning range of 1910–1965 nm, while, in alcohol flame, the number of detected lines reaches about 50. Comparison with the HITRAN2016 database gives a laser linewidth of about 0.06 nm which is very close to the static linewidth measured by an OSA. The temperature of the air is derived to be 298 K with a water mole fraction of about 2%, which is consistent with the measurement of the hygrothermograph. And the calculation indicates an alcohol flame temperature of about 1220 K, which is very close to the measurement result of the thermocouple.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2022
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