In:
Journal of Applied Physics, AIP Publishing, Vol. 66, No. 10 ( 1989-11-15), p. 4767-4769
Abstract:
The stresses in GaAs/Si samples which were prepared under different growing conditions were determined by the x-ray diffraction method. The results show that the stress in GaAs/Si samples is reduced by improving the homogeneity of the thermal field. As the thickness of the epitaxial film increases, the curvature of the sample increases, but the stress remains in the same order.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1989
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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