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  • American Institute of Physics (AIP)  (4)
  • 1985-1989  (4)
  • 1960-1964
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  • 1
    Electronic Resource
    Electronic Resource
    Properties of sputtered superconducting films of Bi2Sr2CaCu2Ox made by low-temperature in situ growth (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting films of Bi2Sr2CaCu2Ox have been fabricated on single-crystal MgO substrates by a low-temperature in situ process. Using a substrate temperature Ts≈645 °C, metallic films with a superconducting onset of 90–100 K and an extrapolated Tc0=56 K have been obtained. X-ray diffraction shows the films to be c-axis oriented. Electron microscopy reveals that the films are not significantly smoother than films which were post-annealed at 865 °C, and that some segregation into nonsuperconducting phases had occurred. The exact mechanism by which crystallization and superconductivity occurs at such low temperatures is not yet known, but it can be speculated that the surface atoms are less constrained and thus have a smaller energy barrier to overcome in forming a crystal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102347
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    In situ measurement of ion-beam-induced deposition of gold (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3636-3643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental system for measuring ion-beam-induced deposition yield is described. Gold films were deposited on quartz-crystal microbalances (QCM) by decomposing dimethyl gold hexafluoroacetylacetonate molecules (C7H7F6O2Au) with a 5-keV argon-ion beam. The QCMs provide an in situ measurement of the deposition rate as a function of ion dose, dose rate, gas pressure, and substrate temperature. The deposition yield, or mass deposited per incident ion, is shown to increase with increasing pressure and decreasing temperature. The yield is independent of the ion dose rate, which implies that the deposition process is not due to macroscopic heating. The deposition yield is shown to depend on the sputter yield of the substrate. The density of the deposited films was determined to be about 10 g/cm3, which is about half the density of bulk gold (19.3 g/cm3). The difference in density is due to carbon contamination in the deposited films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342612
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion cluster emission and deposition from liquid gold ion sources (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2724-2730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission and deposition of molten gold droplets from needle-tip liquid metal ion sources was investigated. The Taylor cone was identified as the source of droplet emission. An upper limit of 8 μm for the virtual source size was measured. Gold films were deposited on silicon substrates. The deposited gold spots showed a peaked, axially symmetric, distribution with a half angle for droplet emission of ∼2° which was considerably smaller than the ion emission angle of ∼45°. Typical deposition fluxes were ∼5×105 μm3/s/sr with total deposition rates of ∼3×103 μm3/s and on an average droplet diameter of ∼1 μm at an emission current of 150 μA. Smaller diameter droplets are produced with decreasing emission current and angle. Gold films with a fine textured morphology suitable for submicron patterning were obtained at emission currents less than ∼135 μA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336300
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  • 4
    Electronic Resource
    Electronic Resource
    The role of gas adsorption in ion-beam-induced deposition of gold (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 870-874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold films were deposited on quartz crystal microbalances (QCM) by decomposing C7H7F6O2Au [dimethyl gold hexafluoroacetylacetonate, or DMG(hfac)] with a 5-keV argon-ion beam. A model for ion-beam-induced deposition is presented which relates the net deposition yield to the gas adsorption, the decomposition cross section, and the sputtering yield. The deposition rate was measured in situ as a function of ion current, gas pressure, and substrate temperature using the QCM. The deposition yield (mass deposited per incident ion) increased with increasing gas pressure and decreasing substrate temperature. The QCM was also used to measure the adsorption of DMG(hfac). The results demonstrated that the variation in deposition yield with temperature and pressure was proportional to the number of DMG(hfac) molecules adsorbed per cm2. Based on the observed correlation between deposition yield and adsorption, a decomposition cross section for 5-keV argon ions of 2×10−13 cm2 was estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343512
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    Paper (German National Licenses)
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