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  • 1990-1994  (4)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Evidence for individual vortex pinning in ceramic YBa2Cu3O7−δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 528-530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the pinning force density Fp in high quality YBa2Cu3 O7−δ ceramics as a function of the temperature and magnetic field up to 5 T. The results indicate that near 60 K the magnetic vortices are pinned individually. This implies that at this temperature the main pinning mechanism involves localized pinning centers separated by short distances rather than twin boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104576
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Low cost data acquisition system for transport characterization of high-Tc superconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 919-921 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low cost microcomputer-based data-acquisition system designed specifically to perform transport characterization of high-Tc superconductors is presented. It can measure the temperature dependence of both the resistance and the critical current. It utilizes the four-point ac in-phase method to eliminate the effects of lead and contact resistance and thermal voltages. Some of the advantages of this method over dc methods are pointed out. The system is implemented on a PC (IBM or compatible) through the IEEE-488 interface. The temperature is controlled by the system with resolution and accuracy of 0.1 and ±0.5 K, respectively, which are the limits of the platinum thermometer used. Voltages in the sample can be measured with a resolution better than 5 nV. The system can be easily modified to measure the critical current dependence on an applied magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141464
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Hall voltage measurements using ac lock-in detection (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 835-836 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The measurement of the Hall constant in insulating highly resistive films is a difficult and challenging task. Owing to the small currents that may be passed through the insulating films, the Hall voltages are often very small in magnitude. A simple electronic circuit using commercial lock-in amplifiers is described which allows measuring these minute Hall voltages. Other practical measuring suggestions are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142517
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Highly polarized photoluminescence from 2-μm-thick strained GaAs grown on CaF2 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 895-897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense photoluminescence was measured in a strained 2-μm-thick GaAs film grown on a (100)-oriented CaF2 substrate. Circular polarization of 77%±2% was obtained at 77 K under excitation with circularly polarized photons below 1.575 eV. For excitation above 1.610 eV the polarization is limited to 30%±2%. These results are clear indications of strain induced splitting between the Mj=||±3/2〉 and the Mj=||± 1/2〉 hole bands. The deduced splitting was 62.5±2.5 meV, corresponding to a stress of the order of −12 kbar. The polarization is maximum for reception energies very close to the excitation. Strained GaAs/CaF2 is thus a good candidate structure for efficient strongly polarized electron sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110988
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    Paper (German National Licenses)
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