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  • 1990-1994  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Homogeneous nucleation in spatially inhomogeneous systems (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4550-4555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homogeneous nucleation of a vapor in the presence of the loss of clusters by diffusion and thermophoretic drift is investigated. Analytical results are obtained for the cluster size distribution and the rate of nucleation by solving the modified kinetic equation for nucleation. The implications of cluster loss by diffusion and phoretic drift on the onset of the homogeneous nucleation of silicon vapor in the horizontal epitaxial chemical vapor deposition reactor is discussed. The range of conditions under which the loss of subcritical clusters by diffusion and drift becomes important for the interpretation of diffusion cloud chamber experimental data of the onset conditions of the homogeneous nucleation of vapors is also delineated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346160
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of cluster scavenging on homogeneous nucleation (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 687-693 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A closed-form expression for the effect of cluster scavenging on the rate of homogeneous nucleation of a vapor in the presence of continuum regime particles is obtained by solving the kinetic equation of nucleation by the method of singular perturbation. The reduction in nucleation rate of a condensing species at a given supersaturation is shown to be dependent largely on the number concentration, the size of the sink particles, and the molecular number concentration of the background gas. The reduction in the rate of nucleation due to the cluster scavenging by transition regime particles is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458422
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetics of binary nucleation: Multiple pathways and the approach to stationarity (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 9033-9041 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Explicit analytical expressions are obtained for the rate of nucleation over different paths in a binary system. It is shown that anisotropy in reaction rates and anisotropy in the free energy surface can cause nucleation to occur bypassing the saddle point. Homomolecular nucleation is demonstrated to be the natural limit of binary nucleation as the concentration of one component goes to zero. Explicit expressions are also obtained for the time lag of binary nucleation by using the singular perturbation approach. It is shown that the time lag associated with different paths of nucleation is essential in determining the relative importance of different nucleation pathways.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459193
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Critical conditions for achieving blue light emission from porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2363-2365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By observing the luminescence micrographic images and measuring the decay behaviors of photoluminescence spectra, it is found that the blue light-emitting porous silicon obtained by boiling water treatment behaves very similarly to the red light-emitting sample. It is thus believed that the blue light emission is originated from the porous silicon skeleton rather than impurity contaminations. The achievement of blue light emission requires the proper control of the size of the Si nanostructures, effective passivation of the internal surfaces of porous silicon layer, and keeping a mechanically strong Si skeleton. A theoretical estimation and the experiments show that the simultaneous fulfillment of these conditions is quite critical, which explains the poor reproducibility of achieving blue emission experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110502
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  • 5
    Electronic Resource
    Electronic Resource
    Large blue shift of light emitting porous silicon by boiling water treatment (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1097-1098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A boiling water treatment of light emitting porous silicon can give rise to a large blue shift of its photoluminescence spectrum and meanwhile strengthen the skeleton of porous Si by filling up many pores with aqueous oxide. A stable blue-green light emission at the peak wavelength down to 500 nm is achieved. FTIR measurements show that the formation of Si dihydride on the sidewall surfaces of the Si rods is not responsible to the visible luminescence for the very thin Si wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108753
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  • 6
    Electronic Resource
    Electronic Resource
    In-situ deposition of superconducting YBCO thin films by magnetron sputtering from powder target (1992)
    Springer
    Journal of superconductivity 5 (1992), S. 239-244 
    Details
    ISSN: 1572-9605
    Keywords: Powder target ; magnetron sputtering ; high-temperature superconducting thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We have used stoichiometric Y1Ba2Cu3O7−x powder as magnetron sputtering target to deposit high-quality high-T c superconducting thin films on MgO, SrTiO3, and ZrO2 substrates. The zero-resistance temperatures are 86–88 K, and the 77 K zero-field critical current density is 8 × 105 A/cm2. The films are highlyc-axis oriented. Films deposited on 10 × 10 × 1 mm3 ZrO2 substrates have surface resistances below 25 mΩ at 77 K and 94 GHz. Using powder targets instead of bulk targets has the following advantages: simple and low-cost target preparation, simple target replacement, and versatility for large-area deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617623
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    Paper (German National Licenses)
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