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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2532-2534 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond films, heavily implanted with boron ions (2×1016 cm−2, 60 keV) are found to exhibit, following annealing and graphite removal, electrical properties similar to those obtained for chemical vapor deposited diamond, heavily doped with B during film growth. Control experiments in which carbon ions were implanted and annealed under identical conditions did not show any significant electrical conductivity, verifying that the measured effects are caused by chemical doping due to the presence of B. It is therefore concluded that doping of polycrystalline diamond by ion implantation is possible and graphitization along grain boundaries, that one might have expected to occur as a result of implantation and annealing, does not seem to severely affect the electrical properties of the implantation-doped material.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 34-36 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of nitrogen impurities in CH4/H2 gas mixtures on the structure and morphology of polycrystalline diamond films prepared by microwave plasma assisted chemical vapor deposition. The nitrogen concentration in the process gas was varied between 1 and 1000 ppm. Optical emission spectroscopy was applied to detect the nitrogen in the plasma via emission from CN radicals. The morphology and texture of polycrystalline films prepared with various N2 impurity levels and CH4 concentrations in the range 0.5%–2% was investigated using scanning electron microscopy and x-ray texture analysis. For the films prepared with low methane concentrations (e.g., 0.5%) only a minor influence of the nitrogen was observed. However, most interestingly, for higher methane concentrations (1%–2%) the addition of small amounts of nitrogen turned out to have a tremendously beneficial effect on the film morphology and structure. Films prepared without additional nitrogen are of nanocrystalline structure and of minor quality, whereas films prepared with nitrogen concentrations in the range 10–100 ppm exhibit a pronounced 〈100〉 texture and a considerably improved crystalline quality as judged by Raman spectroscopy.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical pharmacology 41 (1991), S. 297-301 
    ISSN: 1432-1041
    Keywords: Vasoconstriction ; cyclosporin A ; vascular smooth muscle cells ; cytosolic free calcium ; cell proliferation ; phosphoinositide turnover ; cyclosporin A-induced hypertension ; PDGF ; adverse effect
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Pretreatment of rat vascular smooth muscle cells with cyclosporin A caused concentration- and time-dependent enhancement of both angiotensin II- and platelet-derived growth factor-stimulated cellular functions, which may be related to a rise in vascular tone. In particular, cyclosporin A increased cytosolic free calcium, and augmented the agonist-induced formation of inositol polyphosphate. In addition, it markedly increased the sensitivity of the cells to platelet-derived growth factor-mediated stimulation of thymidine incorporation. The potentiation of vascular smooth muscle cell activity by cyclosporin A may be a novel mechanism by which it exerts an adverse vasoconstrictor effect.
    Type of Medium: Electronic Resource
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