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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6375-6375 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a trial to develop heat-resistant sintered Nd2Fe14B magnets, a refractory element (Cr/W/Zr/Nb/Ta) was selected as an additive incorporating Dy and Co in the Nd-Fe-B composition. Nd13Dy1.5Fe72−xCo6B7.5Mx alloys (M=Cr/W/Nb/Ta, x=0, or 3.5) were arc-melted, pulverized, compacted, and sintered by the conventional powder metallurgy method. It was found that W/Cr greatly enhances the as-sintered intrinsic coercivity (iHc, in kA/m), e.g., from 510 (x=0) to 810 (W, x=3.5) or 740 (Cr, x=3.5). An additional two-stage annealing at 900 and 600 °C for 1 h each led to an even higher iHc of 1000 (W, x=3.5). While Nb/Ta moderately enhanced as-sintered iHc, and responded less to additional annealing. Temperature coefficients of remanence was found to be greatly improved by the W or Cr addition, e.g., 0.43%/°C for x=0 and 0.06%/°C for M=W, x=3.5 (p=1, 20–150 °C). They are thus very suitable for applications at temperatures up to 150 °C. EPMA analyses showed the possible existence of a M2FeB2 (M=W/Nb/Ta) phase at grain boundaries. Thermomagnetic analyses and detailed microstructure of the sintered and/or annealed magnets are discussed.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6600-6602 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-performance R2Fe14BNx-type magnets (R=Nd and/or Pr/Dy) were successfully prepared by sintering. The optimum magnetic properties are coercivity iHc: 680–1440 kA/m; Hc: 500–1000 kA/m; Br: 1.0–1.3 T; and (BH)m: 180–250 kJ/m3 depending on the composition and processing parameters, especially the proper sintering conditions, including nitrogen intake at 1040 to 1050 °C. The magnets thus obtained have Tc values of 335 to 370 °C depending on the nitrogen content, which should be 〈6 at. % for thermal stability. The anisotropy field increases from 6.2 to 8 T with addition of nitrogen, and magnetization measured at 2 T increases by 18%. The weight loss after immersion in a 5% HCl solution for 30 min is 25% less for nitrogenated magnets than for those without nitrogen, due to the replacement of the Nd-rich phase at grain boundaries by more corrosion- resistant nitrides.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 672-678 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half-maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov-de Haas measurement, we demonstrated the existence of a two-dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8×1011 cm−2 at 1.5 K. A HEMT device with 1 μm×40 μm gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2210-2214 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (20 K) luminescent properties of heavily carbon- and zinc-doped GaAs grown by low-pressure metalorganic chemical vapor deposition were investigated. The luminescence linewidth became broader at low temperatures when p(approximately-greater-than)4×1019 cm−3 due to the appearance of a shoulder peak. The main peak shifted to low energy when the dopant concentration was increased; however, the shoulder peak was at around 1.485 eV and was nearly independent of the dopant concentration. The peak of the band-to-acceptor transition occurred at low temperature and dominated the emission spectra of degenerate GaAs. The peak energy of Zn-doped samples was lower than that of C-doped samples because of the existence of defects. The excitation power intensity was varied to investigate the behavior of the shoulder peak for both types of dopants. The shoulder peak was a part of the main peak because of the recombination between the conduction band and the bottom of the impurity band.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5453-5455 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1×1018 and 4×1018 cm−3. However, the 77 K mobility was enhanced from p(approximately-greater-than)4×1018 cm−3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7×1018 to 3×1019 cm−3. As a result, the 77 K mobility was around 50%–60% greater than the 300 K mobility due to the metallic-type conductivity.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2294-2296 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed mechanisms of sputter etch of silicon dioxide in argon plasma are studied using a novel test structure. We have found that a significant amount of the sputtered material (up to 50% of the sputter flux) returns, as an isotropic backscattered flux to the wafer. This backscattered flux results in significant deposition that cannot be accounted for by redeposition, i.e., line-of-sight deposition of the sputtered material, alone. A profile simulator is used to demonstrate a new physical model for the Ar sputter-etch process, based on the interaction of three simultaneous processes: (1) sputtering, (2) direct (i.e., line-of-sight) redeposition of sputtered material, and (3) isotropic deposition of sputtered material backscattered from the gas phase. Simulated profiles show good agreement with experimental results on the test structure and a common device structure.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Clinical & experimental allergy 23 (1993), S. 0 
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Plaque radio-immuno assay has been used to isolate an FgE-binding clone from a lambda gt11 library of Dermatophagoides pteronyssinus cDNA, The clone HD6 contained DNA encoding a 215 residue protein which contained a predicted 17 amino acid residue leader sequence, no cysteines and a single W-glycosylation site. The 198 residue mature protein would have a predicted MW of 22 177 D. No homologues were found in searches of the data banks. Sera from 14/38 allergic children reacted strongly with the polypeptide produced by the clone (37%). Skin tests showed reactivity in 16/30 (53%) allergic patients and 0/10 of controls. Affinity purification of rabbit antibodies with the clone showed that antibodies to the polypeptide had specificities to multiple products in mite extracts corresponding to components of Mr 29, 27 and 24 K by Western blotting. Absorption studies of IgE in allergic serum indicated further entities at 13 and 11.5 kD, It is proposed to name this allergen Der p VII.
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 298-303 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1420-9071
    Keywords: Lithium ; mechanism ; choline ; lecithin ; glycerophosphorylcholine ; phosphorylcholine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The influence of oral lithium on the concentration of red blood cell choline (Ch), lecithin, glycerophosphorylcholine (GPCh) and phosphorylcholine (PCh) was studied. The concentration of RBC Ch was significantly elevated and the concentration of lecithin, GPCh and PCh significantly depressed in 16 patients on oral lithium compared to 9 age-matched controls. We conclude that lithium markedly depletes the red blood cell of choline containing compounds including lecithin. These changes may be responsible for both the therapeutic efficacy and the toxicity of lithium.
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