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  • 1990-1994  (5)
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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Fe/Si superlattices were grown to study the magnetic coupling between ferromagnetic Fe layers (30 A(ring) thick) for Si spacer-layer thicknesses (tSi) between 10 and 40 A(ring). The material is ferromagnetical for tSi≤13 A(ring) and antiferromagnetically coupled for 13 A(ring)≤tSi≤17 A(ring). For tSi≥17 A(ring) the Fe layers are uncoupled. X-ray analysis indicates that the system is well layered, but that the crystal structure remains coherent only for tSi≤17 A(ring). These results, along with our Mössbauer investigation, strongly suggest that the Si layer is crystalline for tSi≤17 A(ring), and is silicide in nature. For thicker spacers, Si becomes amorphous. We propose a model of the layering that is consistent with the known properties of Fe silicide.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7021-7023 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetostriction of melt-spun ribbons of Dyx(Fe1−yBy)1−x (x=0.2, 0.25, 0.3; 0≤y≤0.2) alloys is systematically investigated as a function of the wheel speed during melt quenching. As the wheel speed increases from 10 to 50 m/s, the magnetic softness improves with the wheel speed rather continuously for the alloys with the Dy content x=0.2 and 0.25 but it exhibits a maximum at the wheel speed of 30 or 40 m/s for the alloys with the highest B content (x=0.3). The softness also improves with the B content for a fixed wheel speed. Homogeneous and ultrafine grain structure is observed for the first time even in the as-spun state when the ribbons of the alloy Dy0.3(Fe0.8B0.2)0.7 are fabricated at the wheel speed of 30 m/s. The ribbon having the ultrafine grain structure exhibits good magnetic softness together with a high strain.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Fe/FeSi films possessing antiferromagnetic (AF) interlayer coupling at room temperature develop ferromagnetic remanence when cooled below 100 K, but the AF coupling can be restored at low temperature by exposure to visible light of sufficient intensity ((approximately-greater-than)10 mW/mm2). We attribute these effects to charge carriers in the FeSi spacer layer, which, when thermally or photogenerated, are capable of communicating spin information between the Fe layers.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2786-2788 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Transmission electron microscopy and Rutherford backscattering spectrometry show heteroepitaxial regrowth of Si1−x−yGexCy layers into the metastable diamond cubic phase. Fourier transform infrared spectroscopy verifies that the carbon occupies substitutional lattice sites. Double crystal x-ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C-induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard's law.
    Type of Medium: Electronic Resource
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