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  • 1
    Electronic Resource
    Electronic Resource
    Radio-frequency bias effects on SiO2 films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1847-1855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radio-frequency (rf) bias on the chemical, physical and electrical properties of SiO2 films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition have been investigated. The rf bias power densities used here are relatively low (≤0.3 W/cm2) compared to that used by other researchers, but their influences on deposition processes and on film properties are apparent: the deposition rate decreases with increasing rf bias; the in situ relaxation process of the oxide and the observed surface polish effects have been found to be caused by ion bombardment. The most important effects of the rf bias are on the electrical properties of the deposited films. In particular, a SiO2 film without net fixed charges may be deposited with a low rf bias. It is also shown that the increase in interface trap density with rf bias power is not caused by ion bombardment but to the electron injection from the Si substrate towards the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357705
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  • 2
    Electronic Resource
    Electronic Resource
    High-resolution electron microscopic study of the interface between diamond film and its substrate (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 328-330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution electron microscopic (HREM) study of the interface structure between diamond film and its silicon substrate has been carried out. The HREM images reveal that there is an amorphous layer between diamond film and its substrate for a sample grown by the hot filament chemical vapor deposition. β-SiC crystallites are embedded in this amorphous layer. The HREM images of cross-sectional specimens reveal that the diamond crystallites can nucleate directly on either the intermediate amorphous layer, the β-SiC crystallites, or at some scratches of the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110060
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Thin films of the protonic conductor gadolinium-doped barium cerate by solid-source metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3104-3106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gadolinium-doped barium cerate thin films have been grown on r-plane (11¯02) sapphire and on silver foil substrates by single solid-source metalorganic chemical vapor deposition using tetramethylheptanedionate mixed powder sources. The films have been deposited at 800 °C at a reduced pressure of 6 Torr. The bulk conductivity of the thin films, as measured by an alternating current impedance method, is close to that of sintered ceramic samples, and shows a similar hydrogen/deuterium isotope effect, providing evidence of protonic conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111361
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  • 4
    Electronic Resource
    Electronic Resource
    On the continuous quadratic knapsack problem (1992)
    Springer
    Mathematical programming 55 (1992), S. 99-108 
    Details
    ISSN: 1436-4646
    Keywords: Convex programming ; nonlinear programming ; quadratic programming ; separable programming ; singly constrained quadratic program
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract We introduce a new algorithm for the continuous bounded quadratic knapsack problem. This algorithm is motivated by the geometry of the problem, is based on the iterative solution of a series of simple projection problems, and is easy to understand and implement. In practice, the method compares favorably to other well-known algorithms (some of which have superior worst-case complexity) on problem sizes up ton = 4000.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01581193
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroscopic investigation of oxygen vacancies in solid oxide electrolytes (1990)
    Springer
    Applied physics 50 (1990), S. 545-549 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The primary species in both solid-state conduction and heterogeneous electrocatalysis of solid oxide electrolytes is the anion vacancy. The nature and effect of the local environment on anion vacancies in 10 m/o yttria stabilized zirconia (YSZ) and 20 m/o erbia stabilized bismuth oxide (ESB) was studied using uv-visible absorption and fluorescence spectroscopy. Partial reduction of YSZ and ordering of the oxygen sublattice in ESB is discussed. The species common to both of these phenomena, anion vacancies, was found to be luminescent and the absorption and fluorescence spectra attributable to F-center type defects is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323446
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