Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1557-1559
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 1017 cm−3, provides the only explanation for the observed transport and single particle relaxation times.〈squeeze;1.6p〉
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103352
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