ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 A(ring))/InP(150 A(ring)) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the "effective well-width'' model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110806
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