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  • 1990-1994  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Influence of the electron beam evaporation rate of Pt and the semiconductor carrier density on the characteristics of Pt/n-GaAs Schottky contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6172-6176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier diodes (SBDs) were fabricated on epitaxially grown n-GaAs materials, with different free carrier densities, by electron beam (e-beam) evaporation of Pt at various rates. The quality of the SBDs was evaluated by standard current-voltage (I-V) measurements, while the defects introduced during e-beam evaporation were characterized by deep level transient spectroscopy (DLTS). The results showed that if the GaAs was shielded during Pt deposition from stray electrons originating at the e-beam filament, high quality SBDs were formed. However, if the GaAs was not shielded during deposition, the quality of the diodes was poor and the degree to which their characteristics deviated from the ideal case increased as the total electron dose reaching the substrate increased (for slow evaporation rates) and as the free carrier density of the GaAs increased. DLTS revealed that several surface and subsurface defects were introduced during metallization without the electron shield and it is shown that these defects are responsible for the poor device quality. The nature of some of these defects depended on the free carrier density of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350426
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Modified sample holder for low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2101-2102 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This note describes the design, construction, and test results of a modified sample holder used during low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements. This improved sample holder allows temperature scan rates of up to 6 K/min with a temperature shift of less than 1 K. High electrical isolation makes this sample holder also suitable for low-temperature current-voltage and capacitance-voltage measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143175
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1222-1224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS "signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356460
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  • 4
    Electronic Resource
    Electronic Resource
    Comparison between ruthenium-based and other ohmic contact systems to p-type GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1933-1935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A conventional furnace annealed Ru/Au ohmic contact system on p-GaAs has been investigated. Electrical and morphological characteristics of this contact system were compared with other systems such as Cr/Au, Ti/Pt, and Mn/Au. The Ru/Au contact system has been shown to have superior surface morphology and a comparable specific contact resistance value, even after annealing at 485 °C. The advantages of utilizing Ru as contact material to GaAs are that it forms high quality, thermally stable Schottky contacts to n-GaAs and thermally stable ohmic contacts with low specific contact resistance to p-GaAs. This dual nature of Ru contacts to GaAs makes them extremely important for future use in devices such as heterojunction bipolar transistors (HBTs) and solid state lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108493
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  • 5
    Electronic Resource
    Electronic Resource
    Annealing characteristics and thermal stability of electron beam evaporated ruthenium Schottky contacts to n-GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ruthenium Schottky barrier diodes were fabricated on epitaxially grown n-GaAs, by the electron beam evaporation of Ru. Annealing studies were carried out in vacuum and in air. The effective barrier height and the flatband barrier height of the as-deposited Schottky contacts were 0.86 and 0.91 eV, respectively. These barrier heights reached their respective maximum values of 0.93 and 0.96 eV, after annealing at 450 °C in vacuum. The electrical characteristics of a third set of contacts, which was subjected to prolonged (1000 min) annealing at 400 °C in vacuum, showed no measureable signs of degradation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106567
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characterization of neutron irradiation induced defects in undoped epitaxially grown n-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4339-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped n-GaAs, grown by organometallic vapor phase epitaxy, was irradiated with neutrons from a clinical p(66)/Be(40) source for a range of fluences. Deep level transient spectroscopy (DLTS), employing Pd Schottky barrier diodes, indicated that four electron traps, En1, En2, En4, and En5, with energy levels at 0.04, 0.14, 0.36, and 0.66 eV, respectively, below the conduction band were created during neutron radiation. Their introduction rates varied from 1 cm−1 for the En1 to 11 cm−1 for the En5. It was found that the En1, En2, and En4 defects have DLTS "signatures'' similar to the E1, E2, and E3 point defects introduced during high energy electron irradiation, indicating their point defect nature. The En5 has a very large capture cross section, its emission rate exhibits a strong electric field dependence, and there are indications that it has a band-like energy distribution, that results in a broad DLTS peak. We speculate that this trap is related to the presence of extended defects in the neutron irradiated GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354399
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides (1993)
    Springer
    Applied physics 56 (1993), S. 547-553 
    Details
    ISSN: 1432-0630
    Keywords: 81.40.Rs ; 61.80.−X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We investigated defect production in n-type GaAs with two different free-carrier densities (4×1014 and 1×1016/cm3) by using particles liberated from radionuclides. 90Sr and 241Am were employed as beta and alpha sources, respectively. The results obtained for electron irradiation showed that the same set of primary defects can be produced by beta irradiation from the Sr source as by electrons produced in an accelerator. Similarly, the defects produced by alpha irradiation from the Am source closely resemble those introduced by alpha irradiation in a Van de Graaff accelerator. It was found that the relative concentrations of the primary defects in electron-irradiated GaAs are different to those in alpha-particle irradiated GaAs. Further, for the first time, an alpha irradiation induced defect which seems to be related to the doping concentration was observed in the 1016/cm3 Si doped GaAs. It is concluded that the use of radionuclides is an inexpensive and convenient method to introduce and to study radiation induced defects in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331403
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  • 8
    Electronic Resource
    Electronic Resource
    Defect annealing of alpha-particle irradiated n-GaAs (1994)
    Springer
    Applied physics 59 (1994), S. 305-310 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 73.20.Hb ; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behaviour of irradiation induced defects in n-type GaAs irradiated at 300 K with 5.4 MeV alpha-particles from an americium-241 (Am-241) radio nuclide have been investigated. The annealing kinetics are presented for the alpha-particle induced defects Eα1–Eα5 detected in Organo-Metallic Vapor Phase Epitaxially (OMVPE) grown n-GaAs doped with silicon to 1.2×1016 cm−3, these kinetics are compared to those obtained for similar defects (E1–E5) detected after electron irradiation. While defects Pα1 and Pα2 were detected after removal of the electron defects Eα4 and Eα5, respectively, a new defect labelled Pα0, located 0.152 eV below the conduction band, was introduced by annealing. The thermal behaviour and trap characteristics of these three defects (Pα0–Pα2) are presented. In an attempt to further characterise defects Pα0 and Pα1 a preiliminary study investigating the emission rate field dependence of these defects was conducted, it was observed that defect Pα0 exhibited a fairly strong field dependence while Pα1 exhibited a much weaker dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348235
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