In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 1S ( 1994-01-01), p. 639-
Abstract:
Microcrystalline silicon films were deposited by diluted-hydrogen method and hydrogen-atom-treatment method at 250° C in a plasma enhanced chemical vapor deposition system and they were characterized by nuclear magnetic resonance, Raman spectroscopy, and optical bandgap measurements. One-mask a-Si:H thin film transistors (TFT's) were fabricated with those microcrystalline materials as the channel layer. The highest electron mobilities of the TFT's fabricated by diluted-hydrogen method and hydrogen-atom-treatment method were 1.23 and 1.04 cm 2 /V·s, respectively without any thermal treatment steps.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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