In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 337 ( 1994)
Abstract:
A new method of epitaxial growth of CoSi 2 film on Si substrate by ternary solid state interaction is investigated. XRD, RBS and TEM show that single-crystalline CoSi 2 can be formed on both Si (111) and (100) substrates by using Co/Ti/Si or TiN/Co/Ti/Si multilayer. The evolution of multilayer structure and its resistivity is studied and epitaxy mechanism is discussed. Experimental results indicate strong affinity between Co and Si. During the ternary interaction the epitaxial CoSi 2 can be grown directly on Si and its growth may behave as a diffusion controlled process. The thickness of Ti layer and the annealing procedure have important effect on CoSi 2 epitaxial growth.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-337-449
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1994
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