In:
Applied Physics Letters, AIP Publishing, Vol. 65, No. 25 ( 1994-12-19), p. 3203-3205
Abstract:
Very important evidence has been obtained by high-resolution cross-sectional electron microscopy (HREM) that diamond films prepared by the hot-filament chemical vapor deposition (HFCVD) method were grown epitaxially on the mirror-polished Si(100) substrate in a local area with surface biasing pretreatment. There is about a 7.3° angle between Si (100) and D(100) heteroepitaxial crystalline planes. The same type of twinnings (coherent twin boundaries of type, Σ=3) exist on and near the interface. High preferential oriented diamond films have been observed by scanning electron microscopy (SEM). From the discussion, the pretreatment of the substrate is a key factor for the heteroepitaxy of diamond on Si wafer.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1994
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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