In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 8R ( 1993-08-01), p. 3403-
Abstract:
In this paper, we report detailed theoretical analysis of turn-off time and on-state voltage drop in the new type of polysilicon-contacted thin emitter thyristor, studied using the asymmetrical pin diode model and through comparisons with conventional thyristors. The numerical calculations and experimental results showed that for a suitable thickness and total impurity amount of the thin emitter, not only can the turn-off time be shortened by a factor of around 1.5 compared with that of conventional thyristors, but also the on-state voltage drop of the devices is lower than that of conventional thyristors. When the lifetime of the minority carriers in the n B base was decreased to a suitable value, the turn-off time of the devices could be further shortened, up to 1/2.5-1/3 that of conventional thyristors, without deterioration of the on-state properties. In addition, turn-on properties of the new devices are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.3403
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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