In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 40, No. 8 ( 1991), p. 1329-
Abstract:
Using a Koster-Slater one band-one-side approximation, the relationship between the pressure behavior of nitrogen bound excitons and the band structure is investigated in GaP and GaAs1-xPx. An analytical expression is found to be a good approximation for the pressure coefficient of the deep impurity state. The pressure coefficients of N and NNi bound exciton states are calculated in GaP and GaAs0.17P0.83. A tentative new assignment which agrees with experiments in both ordering of levels and pressure coefficients is given for nitrogen pair configurations.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1991
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